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Resonant Terahertz Light Absorption by Virtue of Tunable Hybrid Interface Phonon–Plasmon Modes in Semiconductor Nanoshells
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Resonant Terahertz Light Absorption by Virtue of Tunable Hybrid Interface Phonon–Plasmon Modes in Semiconductor Nanoshells

Nika, Denis ; Pokatilov, Evghenii ; Fomin, Vladimir ; Devreese, Josef ; Tempere, Jacques

Applied sciences, 2019-04, Vol.9 (7), p.1442 [Periódico revisado por pares]

Basel: MDPI AG

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2
A Special Issue on Electron and Phonon Properties of Nanostructures
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A Special Issue on Electron and Phonon Properties of Nanostructures

Pokatilov, Evghenii P.

Journal of nanoelectronics and optoelectronics, 2009-04, Vol.4 (1), p.1-2

Stevenson Ranch, CA: American Scientific Publishers

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3
A Special Issue on Physical Properties and Applications of Nanostructures
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A Special Issue on Physical Properties and Applications of Nanostructures

Nika, Denis L. ; Pokatilov, Evghenii P.

Journal of nanoelectronics and optoelectronics, 2011-12, Vol.6 (4), p.379-380

Stevenson Ranch, CA: American Scientific Publishers

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4
Phonon Engineering in Hetero- and Nanostructures
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Phonon Engineering in Hetero- and Nanostructures

Balandin, Alexander A. ; Pokatilov, Evghenii P. ; Nika

Journal of nanoelectronics and optoelectronics, 2007-08, Vol.2 (2), p.140-170

American Scientific Publishers

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5
Lattice Thermal Conductivity of Ultra-Thin Freestanding Layers: Face-Centered Cubic Cell Model versus Continuum Approach
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Lattice Thermal Conductivity of Ultra-Thin Freestanding Layers: Face-Centered Cubic Cell Model versus Continuum Approach

Nika, Denis L. ; Zincenco, Nadejda D. ; Pokatilov, Evghenii P.

Journal of nanoelectronics and optoelectronics, 2009-04, Vol.4 (1), p.170-173

American Scientific Publishers

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6
Nanodimensional Chalcogenide Film-Metal Structure: Numerical Modeling of the Gas Sensitive Properties
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Nanodimensional Chalcogenide Film-Metal Structure: Numerical Modeling of the Gas Sensitive Properties

Dmitriev, Serghei V. ; Nika, Denis L. ; Pokatilov, Evghenii P.

Journal of nanoelectronics and optoelectronics, 2009-04, Vol.4 (1), p.165-169

American Scientific Publishers

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