Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Ultra-thin nanocrystalline n-type silicon oxide front contact layers for rear-emitter silicon heterojunction solar cellsMazzarella, L. ; Morales-Vilches, A.B. ; Korte, L. ; Schlatmann, R. ; Stannowski, B.Solar energy materials and solar cells, 2018-06, Vol.179, p.386-391 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafersGarcía-Valenzuela, J.A. ; Rivera, R. ; Morales-Vilches, A.B. ; Gerling, L.G. ; Caballero, A. ; Asensi, J.M. ; Voz, C. ; Bertomeu, J. ; Andreu, J.Thin solid films, 2016-11, Vol.619, p.288-296 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Emitter formation using laser doping technique on n- and p-type c-Si substratesLópez, G. ; Ortega, P. ; Colina, M. ; Voz, C. ; Martín, I. ; Morales-Vilches, A. ; Orpella, A. ; Alcubilla, R.Applied surface science, 2015-05, Vol.336, p.182-187 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Fundamental theorems of Morse theory on posetsFernández-Ternero, D. ; Macías-Virgós, E. ; Mosquera-Lois, D. ; Scoville, N. A. ; Vilches, J. A.AIMS mathematics, 2022-01, Vol.7 (8), p.14922-14945 [Periódico revisado por pares]AIMS PressTexto completo disponível |
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5 |
Material Type: Artigo
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The number of excellent discrete Morse functions on graphsAyala, R. ; Fernández-Ternero, D. ; Vilches, J.A.Discrete Applied Mathematics, 2011-09, Vol.159 (16), p.1676-1688 [Periódico revisado por pares]Kidlington: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETsMichelakis, K. ; Vilches, A. ; Papavassiliou, C. ; Despotopoulos, S. ; Fobelets, K. ; Toumazou, C.IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1309-1314 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistorsLoga, R ; Vilches, ASemiconductor science and technology, 2004-07, Vol.19 (7), p.855-858 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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Base–collector leakage currents in circular geometry InGaP/GaAs double heterojunction bipolar transistorsLoga, R ; Vilches, ASemiconductor science and technology, 2004-03, Vol.19 (3), p.408-412 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Fabrication and characterization of circular geometry InGaP/GaAs double heterojunction bipolar transistorsLoga, R ; Vilches, ASemiconductor science and technology, 2004-03, Vol.19 (3), p.404-407 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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Poincaré duality for posetsMacías-Virgós, E. ; Mosquera-Lois, D. ; Vilches, J.A.Topology and its applications, 2023-11, Vol.339, p.108590, Article 108590 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |