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Resultados de 1 a 10 de 92  para Produção Intelectual da USP

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1
Six sigma method applied for reflow soldering process in SMT (surface Mount Technology)
Six sigma method applied for reflow soldering process in SMT (surface Mount Technology)
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Six sigma method applied for reflow soldering process in SMT (surface Mount Technology)

Ana Carolina Bueno Maira Paulilo Shiki; Valdemir Ronaldo de Lima; Luis Gustavo L Brandão; Mauricio Massazumi Oka; International Symposium on Microelectronics Technology and Devices SBMICRO (18 2003 São Paulo)

Martino J. A.; Pavanello, M. A.; Morimoto, N. I. eds Microelectronic technology and devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

2
Microelectronics Technology and Devices SBMICRO 2002
Microelectronics Technology and Devices SBMICRO 2002
Material Type:
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Microelectronics Technology and Devices SBMICRO 2002

Nilton Itiro Morimoto 1962- Renato Perez Ribas; Patrick Bernard Verdonck 1958-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre)

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

3
Halo optimization for 0.13 micron SOI CMOS technology
Halo optimization for 0.13 micron SOI CMOS technology
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Halo optimization for 0.13 micron SOI CMOS technology

Paula Ghedini Der Agopian Julia Maria Arrabaça; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)

SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008

Pennington The Electrochemical Society 2008

Item não circula. Consulte sua biblioteca.(Acessar)

4
A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
Material Type:
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A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region

Galba Falce de Almeida João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

5
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
Material Type:
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Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs

Marcello Bellodi João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

6
Determination of the ion density and electron temperature using a planar electrostatic probe
Determination of the ion density and electron temperature using a planar electrostatic probe
Material Type:
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Determination of the ion density and electron temperature using a planar electrostatic probe

Laura Swart Patrick Bernard Verdonck 1958-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

7
A simple method to model nonrectangular-gate layout in SOI MOSFETs
A simple method to model nonrectangular-gate layout in SOI MOSFETs
Material Type:
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A simple method to model nonrectangular-gate layout in SOI MOSFETs

Renato Camargo Giacomini João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

8
SU-8 low contrast process for multi-level e-beam lithography
SU-8 low contrast process for multi-level e-beam lithography
Material Type:
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SU-8 low contrast process for multi-level e-beam lithography

R Catelli Antonio Carlos Seabra 1961-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

9
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Material Type:
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Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET

A.G. Paiola Aparecido Sirley Nicolett; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

10
Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates
Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates
Material Type:
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Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates

Hugo Puertas de Araújo Sebastião Gomes dos Santos Filho 1962-; Márcio de Almeida Valle; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics technology and devices SBMicro 2004. Pennington: The Electrochemical Society, 2004. Proceedings, v. 2004-03

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

Resultados de 1 a 10 de 92  para Produção Intelectual da USP

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