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1
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
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Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

2
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
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A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; A Mercha; Cor Claeys; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2003 (18 2003 São Paulo)

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

3
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature
Material Type:
Livro 		Adicionar ao Meu Espaço

Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; A Mercha; Cor Claeys; H Van Meer; K De Meyer; International Symposium on SOI Technology and Devices (11 2003)

Cristoloveanu, S. et al Silicon-on-Insulator Technology and Devices XI. Pennington: Electrochemical Society, 2003

Pennington The Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Claeys, C
  2. Mercha, A
  3. Pavanello, M
  4. Martino, J
  5. De Meyer, K

Neste Assunto:

  1. Microeletrônica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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