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Refinado por: assunto: Memory remover assunto: Science & Technology remover assunto: Technology remover
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Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse
Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse
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Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

Yu, Yang ; Ma, Qihao ; Ling, Haifeng ; Li, Wen ; Ju, Ruolin ; Bian, Linyi ; Shi, Naien ; Qian, Yan ; Yi, Mingdong ; Xie, Linghai ; Huang, Wei

Advanced functional materials, 2019-12, Vol.29 (50), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials
Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials
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Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials

Xu, Ming ; Mai, Xianliang ; Lin, Jun ; Zhang, Wei ; Li, Yi ; He, Yuhui ; Tong, Hao ; Hou, Xiang ; Zhou, Peng ; Miao, Xiangshui

Advanced functional materials, 2020-12, Vol.30 (50), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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3
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
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Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

Ohno, Takeo ; Hasegawa, Tsuyoshi ; Tsuruoka, Tohru ; Terabe, Kazuya ; Gimzewski, James K ; Aono, Masakazu

Nature materials, 2011-06, Vol.10 (8), p.591-595 [Periódico revisado por pares]

England: Nature Publishing Group

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4
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Mikolajick, Thomas ; Slesazeck, Stefan ; Park, Min Hyuk ; Schroeder, Uwe

MRS bulletin, 2018-05, Vol.43 (5), p.340-346 [Periódico revisado por pares]

New York, USA: Cambridge University Press

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5
Physics of the Switching Kinetics in Resistive Memories
Physics of the Switching Kinetics in Resistive Memories
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Physics of the Switching Kinetics in Resistive Memories

Menzel, Stephan ; Böttger, Ulrich ; Wimmer, Martin ; Salinga, Martin

Advanced functional materials, 2015-10, Vol.25 (40), p.6306-6325 [Periódico revisado por pares]

Blackwell Publishing Ltd

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6
MicroRNA-21 preserves the fibrotic mechanical memory of mesenchymal stem cells
MicroRNA-21 preserves the fibrotic mechanical memory of mesenchymal stem cells
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MicroRNA-21 preserves the fibrotic mechanical memory of mesenchymal stem cells

Li, Chen Xi ; Talele, Nilesh P ; Boo, Stellar ; Koehler, Anne ; Knee-Walden, Ericka ; Balestrini, Jenna L ; Speight, Pam ; Kapus, Andras ; Hinz, Boris

Nature materials, 2017-03, Vol.16 (3), p.379-389 [Periódico revisado por pares]

England: Nature Publishing Group

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7
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
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SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

Choi, Shinhyun ; Tan, Scott H ; Li, Zefan ; Kim, Yunjo ; Choi, Chanyeol ; Chen, Pai-Yu ; Yeon, Hanwool ; Yu, Shimeng ; Kim, Jeehwan

Nature materials, 2018-04, Vol.17 (4), p.335-340 [Periódico revisado por pares]

England: Nature Publishing Group

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Artificial Sensory Memory
Artificial Sensory Memory
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Artificial Sensory Memory

Wan, Changjin ; Cai, Pingqiang ; Wang, Ming ; Qian, Yan ; Huang, Wei ; Chen, Xiaodong

Advanced materials (Weinheim), 2020-04, Vol.32 (15), p.e1902434-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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9
Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2 Heterostructures
Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2 Heterostructures
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Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2 Heterostructures

Li, Dong ; Wang, Xiaojuan ; Zhang, Qichong ; Zou, Liping ; Xu, Xiangfan ; Zhang, Zengxing

Advanced functional materials, 2015-12, Vol.25 (47), p.7360-7365 [Periódico revisado por pares]

Blackwell Publishing Ltd

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10
Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers
Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers
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Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers

Li, Dong ; Chen, Mingyuan ; Zong, Qijun ; Zhang, Zengxing

Nano letters, 2017-10, Vol.17 (10), p.6353-6359 [Periódico revisado por pares]

United States: American Chemical Society

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