skip to main content
Idioma:
Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Vertical and Smooth Etching of InP by Cl 2 /Xe Inductively Coupled Plasma
Vertical and Smooth Etching of InP by Cl 2 /Xe Inductively Coupled Plasma
Material Type:
Artigo 		Adicionar ao Meu Espaço

Vertical and Smooth Etching of InP by Cl 2 /Xe Inductively Coupled Plasma

Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio ; Iga, Kenichi

Japanese Journal of Applied Physics, 1999-07, Vol.38 (Part 1, No. 7A), p.4260-4261 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
2
Cl 2 -based Inductively Coupled Plasma Etching of InP Using Internal Antenna
Cl 2 -based Inductively Coupled Plasma Etching of InP Using Internal Antenna
Material Type:
Artigo 		Adicionar ao Meu Espaço

Cl 2 -based Inductively Coupled Plasma Etching of InP Using Internal Antenna

Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio

Japanese Journal of Applied Physics, 2003-11, Vol.42 (Part 1, No. 11), p.6837-6838 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
3
In situ Observation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope
In situ Observation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope
Material Type:
Artigo 		Adicionar ao Meu Espaço

In situ Observation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope

Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 2A), p.426-427 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
4
Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP
Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP
Material Type:
Artigo 		Adicionar ao Meu Espaço

Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP

Matsutani, Akihiro ; Ohtsuki, Hideo ; Muta, Seiichi ; Koyama, Fumio ; Iga, Kenichi

Japanese Journal of Applied Physics, 2001-03, Vol.40 (3R), p.1528-1529 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
5
Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
Material Type:
Artigo 		Adicionar ao Meu Espaço

Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP

Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio ; Iga, Kenichi

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 5A), p.3147-3148 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
6
Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl 2 /Xe
Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl 2 /Xe
Material Type:
Artigo 		Adicionar ao Meu Espaço

Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl 2 /Xe

Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio ; Iga, Kenichi

Japanese Journal of Applied Physics, 2000-03, Vol.39 (Part 1, No. 3A), p.1435-1436 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
7
Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl 2 Inductively Coupled Plasma
Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl 2 Inductively Coupled Plasma
Material Type:
Artigo 		Adicionar ao Meu Espaço

Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl 2 Inductively Coupled Plasma

Matsutani, Akihiro ; Ohtsuki, Hideo ; Koyama, Fumio ; Iga, Kenichi

Japanese Journal of Applied Physics, 2000-10, Vol.39 (Part 1, No. 10), p.6109-6110 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
8
Compositional change of sputtered YBa2Cu3Oy films with substrate location
Compositional change of sputtered YBa2Cu3Oy films with substrate location
Material Type:
Artigo 		Adicionar ao Meu Espaço

Compositional change of sputtered YBa2Cu3Oy films with substrate location

MATSUTANI, K ; TERADA, N ; JO, M ; IHARA, H

Japanese journal of applied physics, 1990, Vol.29 (1), p.79-80 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

Texto completo disponível

Citações Citado por
9
A novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure
A novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure
Material Type:
Artigo 		Adicionar ao Meu Espaço

A novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure

KOBAYASHI, K ; MURAI, H ; SAKAMOTO, T ; BAERT, K ; TOKIOKA, H ; SUGAWARA, T ; MASUTANI, Y ; NAMIZAKI, H ; NUNOSHITA, M

Japanese Journal of Applied Physics, 1993-01, Vol.32 (1B), p.469-473 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar
  1. Antes de1990  (1)
  2. 1990Até1992  (1)
  3. 1993Até1998  (1)
  4. 1999Até2000  (3)
  5. Após 2000  (4)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.