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Resultados de 1 a 10 de 12  para Produção Intelectual da USP

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Refinado por: assunto: Superfície Física remover
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1
Self-consistent determination of the spin-polarized charge distribution in diluted magnetic semiconductor heterostructures
Self-consistent determination of the spin-polarized charge distribution in diluted magnetic semiconductor heterostructures
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Self-consistent determination of the spin-polarized charge distribution in diluted magnetic semiconductor heterostructures

Guilherme Matos Sipahi Ivan Silvetre Paganini Marin; Marcel Nogueira d'Eurydice; Sara Cristina Pinto Rodrigues; Luisa Maria Ribeiro Scolfaro; Marco Aurelio Boselli; Ivan Costa da Cunha Lima; Latin American Congress of Surface Science and its Applications (12. 2005 Angra dos Reis, RJ)

Program Rio de Janeiro : PUC/RIO, 2005

Rio de Janeiro PUC/RIO 2005

Acesso online

2
Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N) a comparative study
Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N) a comparative study
Material Type:
Artigo 		Adicionar ao Meu Espaço

Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N) a comparative study

M Marques L G Ferreira; L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro

Physical Review B v. 71, n. 20, p. 205204/1-205204/11, 2005

Woodbury 2005

Acesso online

3
Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N) a comparative study
Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N) a comparative study
Material Type:
Artigo 		Adicionar ao Meu Espaço

Monte Carlo simulations applied to "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X quaternary alloys (X=As, P, N) a comparative study

M Marques L G Ferreira; L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro

Physical Review B v. 71, n. 20, p. 205204/1-205204/11, 2005

Woodbury 2005

Acesso online

4
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

S C P Rodrigues Guilherme Matos Sipahi; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Physica B Amsterdam v. 302, p. 106-113, 2001

Amsterdam 2001

Acesso online

5
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells
Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

S C P Rodrigues Guilherme Matos Sipahi; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Physica B Amsterdam v. 302, p. 106-113, 2001

Amsterdam 2001

Acesso online

6
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Material Type:
Artigo 		Adicionar ao Meu Espaço

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

L. E. Ramos (Luis Eugênio) L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J L P Castineira; A L Rosa; J. R Leite (José Roberto)

Physical Review B Woodbury v. 63, n. 16, p. 5210/1-5210/10, 2001

Woodbury 2001

Acesso online

7
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Material Type:
Artigo 		Adicionar ao Meu Espaço

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

L. E. Ramos (Luis Eugênio) L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J L P Castineira; A L Rosa; J. R Leite (José Roberto)

Physical Review B Woodbury v. 63, n. 16, p. 5210/1-5210/10, 2001

Woodbury 2001

Acesso online

8
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN
Material Type:
Artigo 		Adicionar ao Meu Espaço

Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN

H W Leite Alves J L A Alves; A M Santos; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Brazilian Journal of Physics v. 34, n. 2B, p. 617-619, 2004

São Paulo 2004

Item não circula. Consulte sua biblioteca.(Acessar)

9
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN
Material Type:
Artigo 		Adicionar ao Meu Espaço

Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN

H W Leite Alves J L A Alves; A M Santos; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Brazilian Journal of Physics v. 34, n. 2B, p. 617-619, 2004

São Paulo 2004

Item não circula. Consulte sua biblioteca.(Acessar)

10
Adsorption of Si and C atoms over SiC (111) surfaces
Adsorption of Si and C atoms over SiC (111) surfaces
Material Type:
Artigo 		Adicionar ao Meu Espaço

Adsorption of Si and C atoms over SiC (111) surfaces

P G Vivas E E da Silva; L C de Carvalho; J L A Alves; H W Leite Alves; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Brazilian Journal of Physics São Paulo v. 32, n. 2A, p. 396-398, 2002

São Paulo 2002

Acesso online

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Deste Autor:

  1. Scolfaro, L
  2. Leite, J
  3. Rodrigues, S
  4. Teles, L
  5. Alves, J

Neste Assunto:

  1. Estrutura Eletrônica
  2. Matéria Condensada
  3. Semicondutores
  4. Mudança De Fase
  5. Materiais (Propriedades Elétricas)

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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