Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on SiKataria, H ; Junesand, C ; Wang, Z ; Metaferia, W ; Sun, Y T ; Lourdudoss, S ; Patriarche, G ; Bazin, A ; Raineri, F ; Mages, P ; Julian, N ; Bowers, J ESemiconductor science and technology, 2013-09, Vol.28 (9), p.94008 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire SubstrateYoshida, Harumasa ; Takagi, Yasufumi ; Kuwabara, Masakazu ; Amano, Hiroshi ; Kan, HirofumiJapanese Journal of Applied Physics, 2007-09, Vol.46 (9R), p.5782 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene DotsChung, Kunook ; Yoo, Hyobin ; Hyun, Jerome K. ; Oh, Hongseok ; Tchoe, Youngbin ; Lee, Keundong ; Baek, Hyeonjun ; Kim, Miyoung ; Yi, Gyu-ChulAdvanced materials (Weinheim), 2016-09, Vol.28 (35), p.7688-7694 [Periódico revisado por pares]Blackwell Publishing LtdTexto completo disponível |
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4 |
Material Type: Capítulo de Livro
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Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integrationSun, Yan-Ting ; Lourdudoss, SebastianFUTURE DIRECTIONS IN SILICON PHOTONICS, 2019, p.163 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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High‐Temperature Annealing and Patterned AlN/Sapphire InterfacesHagedorn, Sylvia ; Mogilatenko, Anna ; Walde, Sebastian ; Pacak, Daniel ; Weinrich, Jonas ; Hartmann, Carsten ; Weyers, Markusphysica status solidi (b), 2021-10, Vol.258 (10), p.n/a [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Laterally overgrown structures as substrates for lattice mismatched epitaxyZytkiewicz, Z.RThin solid films, 2002-06, Vol.412 (1), p.64-75 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Integration of GaN and Diamond Using Epitaxial Lateral OvergrowthAhmed, Raju ; Siddique, Anwar ; Anderson, Jonathan ; Gautam, Chhabindra ; Holtz, Mark ; Piner, EdwinACS applied materials & interfaces, 2020-09, Vol.12 (35), p.39397-39404 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS TemplatesHe, Chenguang ; Zhao, Wei ; Zhang, Kang ; He, Longfei ; Wu, Hualong ; Liu, Ningyang ; Zhang, Shan ; Liu, Xiaoyan ; Chen, ZhitaoACS applied materials & interfaces, 2017-12, Vol.9 (49), p.43386-43392 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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9 |
Material Type: Artigo
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Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene DotsChung, Kunook ; Yoo, Hyobin ; Hyun, Jerome K. ; Oh, Hongseok ; Tchoe, Youngbin ; Lee, Keundong ; Baek, Hyeonjun ; Kim, Miyoung ; Yi, Gyu‐ChulAdvanced materials (Weinheim), 2016-09, Vol.28 (35), p.7688-7694 [Periódico revisado por pares]GermanyTexto completo disponível |
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10 |
Material Type: Artigo
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Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)Manzo, Sebastian ; Su, Katherine ; Arnold, Michael S. ; Kawasaki, Jason K.ACS applied materials & interfaces, 2023-12, Vol.15 (51), p.59905-59911 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |