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Mono-crystalline silicon strips grown by liquid phase epitaxy for photovoltaic applications
Mono-crystalline silicon strips grown by liquid phase epitaxy for photovoltaic applications
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Mono-crystalline silicon strips grown by liquid phase epitaxy for photovoltaic applications

Li, Bo ; Kitai, Adrian H

Proceedings of SPIE, the International Society for Optical Engineering, 2010, Vol.7750, p.77502N-77502N-7

Bellingham, Wash: SPIE

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2
InP Overgrowth on SiO2 for Active Photonic Devices on Silicon
InP Overgrowth on SiO2 for Active Photonic Devices on Silicon
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InP Overgrowth on SiO2 for Active Photonic Devices on Silicon

JUNESAND, Carl ; ZHECHAO WANG ; WOSINSKI, Lech ; LOURDUDOSS, Sebastian

Proceedings of SPIE, the International Society for Optical Engineering, 2010, Vol.7606

Bellingham, Wash: SPIE

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3
Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor
Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor
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Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Gao, Haiyong ; Lee, Jaesoong ; Ni, Xianfeng ; Leach, Jacob ; Özgür, Ümit ; Morkoç, Hadis

Proceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.7939, p.793920-793920-7

Bellingham WA: SPIE

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4
Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching
Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching
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Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching

Leach, J ; Özgür, Ü ; Ni, X ; Xie, J ; Morkoç, H

Proceedings of SPIE, the International Society for Optical Engineering, 2008, Vol.6894, p.689425-689425-7

Bellingham, Wash: SPIE

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5
Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices
Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices
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Study of epitaxial lateral overgrowth of GaN for application in the fabrication of optoelectronic devices

Berry Ann, N. J ; Rodak, L. E ; Kasarla, Kalyan ; Yang, Nanying ; Korakakis, D

Proceedings of SPIE, the International Society for Optical Engineering, 2005, Vol.6017, p.60170D-60170D-8

Bellingham (Wash.): SPIE

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6
Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition
Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition
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Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition

Ni, X ; Özgür, Ü ; Chevtchenko, S ; Nie, J ; Morkoç, H ; Devaty, R. P ; Choyke, W. J

Proceedings of SPIE, the International Society for Optical Engineering, 2008, Vol.6894, p.689420-689420-5

Bellingham, Wash: SPIE

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7
Selective deposition of GaN layers for semiconductor lasers technology
Selective deposition of GaN layers for semiconductor lasers technology
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Selective deposition of GaN layers for semiconductor lasers technology

Stanczyk, Beata ; Jagoda, Andrzej ; Dobrzanski, Lech

SPIE 2003

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8
AFM and CAFM studies of ELO GaN films
AFM and CAFM studies of ELO GaN films
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AFM and CAFM studies of ELO GaN films

Kasliwal, V ; Moore, J. C ; Ni, X ; Morkoç, H ; Baski, A. A

Proceedings of SPIE, the International Society for Optical Engineering, 2007, Vol.6473, p.647308-647308-7

Bellingham WA: SPIE

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9
Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD
Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD
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Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD

NI, X ; OZGÜR, U ; MORKOC, H ; BASKI, A. A ; LILIENTAL-WEBER, Z ; EVERITT, H. O

Proceedings of SPIE, the International Society for Optical Engineering, 2007, p.647303.1-647303.7

Bellingham WA: SPIE

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10
Defects and degradation of nitride-based laser diodes
Defects and degradation of nitride-based laser diodes
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Defects and degradation of nitride-based laser diodes

Tomiya, Shigetaka ; Hino, Tomonori ; Miyajima, Takao ; Goto, Osamu ; Ikeda, Masao

Proceedings of SPIE, the International Society for Optical Engineering, 2006, Vol.6133, p.613308-613308-10

Bellingham (Wash.): SPIE

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