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Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness
Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness
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Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

Shimizu, Tetsuhide ; Teranishi, Yoshikazu ; Morikawa, Kazuo ; Komiya, Hidetoshi ; Watanabe, Tomotaro ; Nagasaka, Hiroshi ; Yang, Ming

Thin solid films, 2015-04, Vol.581, p.39-47 [Periódico revisado por pares]

Elsevier B.V

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2
Ion- and temperature-induced 3-dimensional nanoscale patterning in Ti1-xAlxN deposited by High Power Impulse Magnetron Sputtering
Ion- and temperature-induced 3-dimensional nanoscale patterning in Ti1-xAlxN deposited by High Power Impulse Magnetron Sputtering
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Ion- and temperature-induced 3-dimensional nanoscale patterning in Ti1-xAlxN deposited by High Power Impulse Magnetron Sputtering

Warres, Clementine ; Meyer, J.C. ; Lutz, T. ; Albrecht, P. ; Schröppel, B. ; Engelhart, W. ; Kümmel, J.

Thin solid films, 2023-09, Vol.781, p.139977, Article 139977 [Periódico revisado por pares]

Elsevier B.V

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3
Residual stress reduction in piezoelectric Sc0.4Al0.6N films by variable-pressure sputtering from 0.4 to 1.0 Pa
Residual stress reduction in piezoelectric Sc0.4Al0.6N films by variable-pressure sputtering from 0.4 to 1.0 Pa
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Residual stress reduction in piezoelectric Sc0.4Al0.6N films by variable-pressure sputtering from 0.4 to 1.0 Pa

Tabaru, Tatsuo ; Akiyama, Morito

Thin solid films, 2019-12, Vol.692, p.137625, Article 137625 [Periódico revisado por pares]

Elsevier B.V

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4
Doping Ga effect on ZnO radio frequency sputtered films from a powder target
Doping Ga effect on ZnO radio frequency sputtered films from a powder target
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Doping Ga effect on ZnO radio frequency sputtered films from a powder target

Chaabouni, F. ; Khalfallah, B. ; Abaab, M.

Thin solid films, 2016-10, Vol.617, p.95-102 [Periódico revisado por pares]

Elsevier B.V

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5
Effects of deposition time in chemically deposited ZnS films in acidic solution
Effects of deposition time in chemically deposited ZnS films in acidic solution
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Effects of deposition time in chemically deposited ZnS films in acidic solution

Haddad, H. ; Chelouche, A. ; Talantikite, D. ; Merzouk, H. ; Boudjouan, F. ; Djouadi, D.

Thin solid films, 2015-08, Vol.589, p.451-456 [Periódico revisado por pares]

Elsevier B.V

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6
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
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Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

Ozgit, Cagla ; Donmez, Inci ; Alevli, Mustafa ; Biyikli, Necmi

Thin solid films, 2012-01, Vol.520 (7), p.2750-2755 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films
Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films
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Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

Chou, Ching-Tian ; Wang, Fang-Hsing ; Chen, Wei-Chun

Thin solid films, 2016-04, Vol.605, p.143-148 [Periódico revisado por pares]

Elsevier B.V

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8
Calculation of dispersion of surface and interface phonon polariton resonances in wurtzite semiconductor multilayer system taking damping effects into account
Calculation of dispersion of surface and interface phonon polariton resonances in wurtzite semiconductor multilayer system taking damping effects into account
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Calculation of dispersion of surface and interface phonon polariton resonances in wurtzite semiconductor multilayer system taking damping effects into account

Lee, S.C. ; Ng, S.S. ; Abu Hassan, H. ; Hassan, Z. ; Dumelow, T.

Thin solid films, 2014-01, Vol.551, p.114-119 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Influence of CrN and AlN layer thicknesses on structure and mechanical properties of CrN/AlN superlattices
Influence of CrN and AlN layer thicknesses on structure and mechanical properties of CrN/AlN superlattices
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Influence of CrN and AlN layer thicknesses on structure and mechanical properties of CrN/AlN superlattices

Schlögl, M. ; Mayer, B. ; Paulitsch, J. ; Mayrhofer, P.H.

Thin solid films, 2013-10, Vol.545, p.375-379 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Growth and characterization of high transmittance GZO films prepared by sol-gel method
Growth and characterization of high transmittance GZO films prepared by sol-gel method
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Growth and characterization of high transmittance GZO films prepared by sol-gel method

Wang, Hailin ; Sun, Yihua ; Fang, Liang ; Wang, Lei ; Chang, Baocheng ; Sun, Xiaohua ; Ye, Linlong

Thin solid films, 2016-09, Vol.615, p.19-24 [Periódico revisado por pares]

Elsevier B.V

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