Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Singularities of Polishing Substrates GaAs by Chemo-Dynamical and Non-Contact Chemo-Mechanical MethodsPashchenko, G.A. ; Kravetsky, M.J. ; Fomin, O.V.Fìzika ì hìmìâ tverdogo tìla (Online), 2016-10, Vol.16 (3), p.560-564 [Periódico revisado por pares]Vasyl Stefanyk Precarpathian National UniversityTexto completo disponível |
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2 |
Material Type: Artigo
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Striatal Function in Generalized Social Phobia: A Functional Magnetic Resonance Imaging StudySareen, Jitender ; Campbell, Darren W ; Leslie, William D ; Malisza, Krisztina L ; Stein, Murray B ; Paulus, Martin P ; Kravetsky, Laura B ; Kjernisted, Kevin D ; Walker, John R ; Reiss, Jeffrey PBiological psychiatry (1969), 2007-02, Vol.61 (3), p.396-404 [Periódico revisado por pares]United States: Elsevier IncTexto completo disponível |
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3 |
Material Type: Artigo
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Happy but not so approachable: the social judgments of individuals with generalized social phobiaCampbell, D. W. ; Sareen, J. ; Stein, M. B. ; Kravetsky, L. B. ; Paulus, M. P. ; Hassard, S. T. ; Reiss, J. P .Depression and anxiety, 2009-05, Vol.26 (5), p.419-424 [Periódico revisado por pares]Hoboken: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |
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4 |
Material Type: Artigo
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Porous III-V compounds as nonlinear optical materialsTiginyanu, I. M. ; Kravetsky, I. V. ; Langa, S. ; Marowsky, G. ; Monecke, J. ; Föll, H.Physica status solidi. A, Applied research, 2003-05, Vol.197 (2), p.549-555 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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5 |
Material Type: Artigo
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Semiconductor sieves as nonlinear optical materialsTiginyanu, I. M. ; Kravetsky, I. V. ; Monecke, J. ; Cordts, W. ; Marowsky, G. ; Hartnagel, H. L.Applied physics letters, 2000-10, Vol.77 (15), p.2415-2417 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Design of New Nonlinear Optical Materials Based on Porous III-V CompoundsTiginyanu, I.M. ; Kravetsky, I.V. ; Marowsky, G. ; Monecke, J. ; Hartnagel, H.L.physica status solidi (b), 2000-09, Vol.221 (1), p.557-560 [Periódico revisado por pares]Berlin: WILEY-VCH Verlag Berlin GmbHTexto completo disponível |
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7 |
Material Type: Artigo
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Highly sensitive thermoluminescent anion-defective α-Al2O3:C single crystal detectorsAKSELROD, M. S ; KORTOV, V. S ; KRAVETSKY, D. J ; GOTLIB, V. IRadiation protection dosimetry, 1990, Vol.32 (1), p.15-20 [Periódico revisado por pares]Oxford: Oxford University PressTexto completo disponível |
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8 |
Material Type: Artigo
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Highly Sensitive Thermoluminescent Anion-Defect Alpha-Al2O3:C Single Crystal DetectorsAkselrod, M.S. ; Kortov, V.S. ; Kravetsky, D.J. ; Gotlib, V.I.Radiation protection dosimetry, 1990-10, Vol.33 (1-4), p.119-122 [Periódico revisado por pares]Oxford University PressTexto completo disponível |
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9 |
Material Type: Artigo
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A study of ion-implanted Si(111) and Si(111)/silicon oxide by optical second harmonic generationKravetsky, I.V ; Kulyuk, L.L ; McGilp, J.F ; Cavanagh, M ; Chandola, S ; Boness, J ; Marowsky, G ; Harbsmeier, FSurface science, 1998-05, Vol.402, p.542-546 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Ata de Congresso
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A study of ion-implanted Si(111) and Si(111)/silicon oxide by optical second harmonic generationKRAVETSKY, I. V ; KULYUK, L. L ; MCGILP, J. F ; CAVANAGH, M ; CHANDOLA, S ; BONESS, J ; MAROWSKY, G ; HARBSMEIER, FSurface science, 1998, Vol.402-04, p.542-546 [Periódico revisado por pares]Amsterdam: Elsevier ScienceTexto completo disponível |