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Novel fabrication technique towards quantum dots
Novel fabrication technique towards quantum dots
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Novel fabrication technique towards quantum dots

Liu, Der-Cherng ; Lee, Chien-Ping

Applied physics letters, 1993-12, Vol.63 (25), p.3503-3505 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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Enhancement of electron-wave reflection by superlattices with multiple stacks of multiquantum barriers
Enhancement of electron-wave reflection by superlattices with multiple stacks of multiquantum barriers
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Enhancement of electron-wave reflection by superlattices with multiple stacks of multiquantum barriers

Yen, S. T. ; Tsai, C. M. ; Lee, C. P. ; Liu, D. C.

Applied physics letters, 1994-02, Vol.64 (9), p.1108-1110 [Periódico revisado por pares]

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3
Asymmetric dark current in quantum well infrared photodetectors
Asymmetric dark current in quantum well infrared photodetectors
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Asymmetric dark current in quantum well infrared photodetectors

Tsai, K. L. ; Lee, C. P. ; Chang, K. H. ; Liu, D. C. ; Chen, H. R. ; Tsang, J. S.

Applied physics letters, 1994-05, Vol.64 (18), p.2436-2438 [Periódico revisado por pares]

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4
Scattering-type scanning near-field optical microscopy with Akiyama piezo-probes
Scattering-type scanning near-field optical microscopy with Akiyama piezo-probes
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Scattering-type scanning near-field optical microscopy with Akiyama piezo-probes

Dapolito, Michael ; Chen, Xinzhong ; Li, Chaoran ; Tsuneto, Makoto ; Zhang, Shuai ; Du, Xu ; Liu, Mengkun ; Gozar, Adrian

Applied physics letters, 2022-01, Vol.120 (1) [Periódico revisado por pares]

United States: American Institute of Physics (AIP)

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5
Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet
Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet
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Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

DC, Mahendra ; Liu, Tao ; Chen, Jun-Yang ; Peterson, Thomas ; Sahu, Protyush ; Li, Hongshi ; Zhao, Zhengyang ; Wu, Mingzhong ; Wang, Jian-Ping

Applied physics letters, 2019-03, Vol.114 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Orientational self-assembled field-effect transistors based on a single-walled carbon nanotube
Orientational self-assembled field-effect transistors based on a single-walled carbon nanotube
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Orientational self-assembled field-effect transistors based on a single-walled carbon nanotube

Li, Xianglong ; Liu, Yunqi ; Shi, Dachuan ; Sun, Yanming ; Yu, Gui ; Zhu, Daoben ; Liu, Hongmin ; Liu, Xinyu ; Wu, Dexin

Applied physics letters, 2005-12, Vol.87 (24), p.243102-243102-3 [Periódico revisado por pares]

American Institute of Physics

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7
Interlayer-glide-driven isosymmetric phase transition in compressed In{sub 2}Se{sub 3}
Interlayer-glide-driven isosymmetric phase transition in compressed In{sub 2}Se{sub 3}
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Interlayer-glide-driven isosymmetric phase transition in compressed In{sub 2}Se{sub 3}

Ke, Feng ; Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 ; Liu, Cailong ; Zhang, Junkai ; Han, Yonghao ; Gao, Chunxiao ; Gao, Yang ; Ma, Yanzhang ; Tan, Dayong ; Guangzhou Institute of Geochemistry, Chinese Academy of Sciences, Guangzhou 510640 ; Shu, Jinfu ; Yang, Wenge ; Mao, Ho-Kwang ; Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 ; Chen, Bin ; Chen, Xiao-Jia

Applied physics letters, 2014-05, Vol.104 (21) [Periódico revisado por pares]

United States

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8
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling
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Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

Lu, Y. ; Cong, G. W. ; Liu, X. L. ; Lu, D. C. ; Wang, Z. G. ; Wu, M. F.

Applied physics letters, 2004-12, Vol.85 (23), p.5562-5564 [Periódico revisado por pares]

United States

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9
Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films
Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films
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Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films

Liu, Chun-Li ; Jiang, Z. X. ; Hegde, R. I. ; Sieloff, D. D. ; Rai, R. S. ; Gilmer, D. C. ; Hobbs, C. C. ; Tobin, P. J. ; Lu, Shifeng

Applied physics letters, 2002-08, Vol.81 (8), p.1441-1443 [Periódico revisado por pares]

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10
Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer
Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer
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Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Wang, Lianshan ; Liu, Xianglin ; Zan, Yude ; Wang, Jun ; Wang, Du ; Lu, Da-cheng ; Wang, Zhanguo

Applied physics letters, 1998-01, Vol.72 (1), p.109-111 [Periódico revisado por pares]

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