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11
Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH4 medium
Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH4 medium
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Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH4 medium

Filatov, D. O. ; Kruglova, M. V. ; Isakov, M. A. ; Siprova, S. V. ; Marychev, M. O. ; Shengurov, V. G. ; Chalkov, V. Yu ; Denisov, S. A.

Semiconductors (Woodbury, N.Y.), 2008-09, Vol.42 (9), Article 1098 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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12
Synthesis and crystal structure of a new representative of the Rb2U2MoO10 uranomolybdate series
Synthesis and crystal structure of a new representative of the Rb2U2MoO10 uranomolybdate series
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Synthesis and crystal structure of a new representative of the Rb2U2MoO10 uranomolybdate series

Alekseev, E. V. ; Suleimanov, E. V. ; Chuprunov, E. V. ; Golubev, A. V. ; Fukin, G. K. ; Marychev, M. O.

Russian journal of inorganic chemistry, 2007-09, Vol.52 (9), p.1446-1449 [Periódico revisado por pares]

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13
Photoluminescence and EPR of porous silicon formed on n+ and p+ single crystals implanted with boron and phosphorus ions
Photoluminescence and EPR of porous silicon formed on n+ and p+ single crystals implanted with boron and phosphorus ions
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Photoluminescence and EPR of porous silicon formed on n+ and p+ single crystals implanted with boron and phosphorus ions

Demidov, E. S. ; Rassolova, I. S. ; Gorshkov, O. N. ; Vasil’ev, V. K. ; Marychev, M. O. ; Mikhaĭlov, A. N. ; Tetelbaum, D. I. ; Filippov, S. A.

Physics of the solid state, 2008, Vol.50 (8), p.1565-1569 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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14
Photoluminescence of self-forming nanoclusters grown in GeSi/Si heterostructures by sublimating molecular beam epitaxy in GeH4 medium
Photoluminescence of self-forming nanoclusters grown in GeSi/Si heterostructures by sublimating molecular beam epitaxy in GeH4 medium
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Photoluminescence of self-forming nanoclusters grown in GeSi/Si heterostructures by sublimating molecular beam epitaxy in GeH4 medium

Filatov, D. O. ; Kruglova, M. V. ; Isakov, M. A. ; Siprova, S. V. ; Marychev, M. O. ; Shengurov, V. G. ; Chalkov, V. Yu ; Denisov, S. A.

Inorganic materials, 2008-11, Vol.44 (11), p.1157-1162 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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15
Cr doped Ca2GeO4, Ca5Ge3O11 and Li2CaGeO4 single crystals grown by the flux method
Cr doped Ca2GeO4, Ca5Ge3O11 and Li2CaGeO4 single crystals grown by the flux method
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Cr doped Ca2GeO4, Ca5Ge3O11 and Li2CaGeO4 single crystals grown by the flux method

Marychev, M.O. ; Koseva, I. ; Gencheva, G. ; Stoyanova, R. ; Kukeva, R. ; Nikolov, V.

Journal of crystal growth, 2017-03, Vol.461, p.46-52 [Periódico revisado por pares]

Elsevier B.V

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16
The study of spectroscopic and luminescence properties of disordered laser crystals calcium niobium gallium garnet doped with Er3
The study of spectroscopic and luminescence properties of disordered laser crystals calcium niobium gallium garnet doped with Er3
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The study of spectroscopic and luminescence properties of disordered laser crystals calcium niobium gallium garnet doped with Er3

Ryabochkina, P. A ; Voronko, Yu. K ; Malov, A. V ; Marychev, M. O ; Sobol, A. A ; Ushakov, S. N ; Chuprunov, E. V

Proceedings of SPIE, the International Society for Optical Engineering, 2008, Vol.6998, p.69981B-69981B-7

Bellingham, Wash: SPIE

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17
Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr + ions in Si and SiO 2 /Si
Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr + ions in Si and SiO 2 /Si
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Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr + ions in Si and SiO 2 /Si

Nikolskaya, A A ; Korolev, D S ; Konakov, A A ; Mikhaylov, A N ; Belov, A I ; Marychev, M O ; Murtazin, R I ; Pavlov, D A ; Tetelbaum, D I

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12031 [Periódico revisado por pares]

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18
Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr+ ions in Si and SiO2/Si
Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr+ ions in Si and SiO2/Si
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Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr+ ions in Si and SiO2/Si

Nikolskaya, A A ; Korolev, D S ; Konakov, A A ; Mikhaylov, A N ; Belov, A I ; Marychev, M O ; Murtazin, R I ; Pavlov, D A ; Tetelbaum, D I

Journal of physics. Conference series, 2020-12, Vol.1695 (1) [Periódico revisado por pares]

IOP Publishing

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19
Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing
Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing
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Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

Nikolskaya, A.A. ; Korolev, D.S. ; Mikhaylov, A.N. ; Konakov, A.A. ; Belov, A.I. ; Marychev, M.O. ; Murtazin, R.I. ; Pavlov, D.A. ; Tetelbaum, D.I.

Surface & coatings technology, 2020-03, Vol.386, p.125496, Article 125496 [Periódico revisado por pares]

Elsevier B.V

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20
Growth and defect structure of CdF2 and nonstoichiometric Cd1-xRxF2+x phases (r = rare earth elements and in). I. Growth of Cd1-xRxF2+x single crystals (r = La-Lu, y)
Growth and defect structure of CdF2 and nonstoichiometric Cd1-xRxF2+x phases (r = rare earth elements and in). I. Growth of Cd1-xRxF2+x single crystals (r = La-Lu, y)
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Growth and defect structure of CdF2 and nonstoichiometric Cd1-xRxF2+x phases (r = rare earth elements and in). I. Growth of Cd1-xRxF2+x single crystals (r = La-Lu, y)

Buchinskaya, I I ; Ryzhova, E A ; Marychev, M O ; Sobolev, B P

Kristallografiya, 2004-05, Vol.49 (3), p.566-575 [Periódico revisado por pares]

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