Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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100-GHz Gunn diodes fabricated by molecular beam epitaxyHaydl, W. H. ; Smith, S. ; Bosch, R.Applied physics letters, 1980-09, Vol.37 (6), p.556-557 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80Sayed, Islam E. H. ; Jain, Nikhil ; Steiner, Myles A. ; Geisz, John F. ; Bedair, S. M.Applied physics letters, 2017-08, Vol.111 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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12 W peak-power 10 ps duration optical pulse generation by gain switching of a single-transverse-mode GaInN blue laser diodeKono, Shunsuke ; Oki, Tomoyuki ; Miyajima, Takao ; Ikeda, Masao ; Yokoyama, HiroyukiApplied physics letters, 2008-10, Vol.93 (13), p.131113-131113-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 KXue, Yongzhou ; Chen, Zesheng ; Ni, Haiqiao ; Niu, Zhichuan ; Jiang, Desheng ; Dou, Xiuming ; Sun, BaoquanApplied physics letters, 2017-10, Vol.111 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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1.54 μ m emitters based on erbium doped InGaN p-i-n junctionsDahal, R ; Ugolini, C ; Lin, J Y ; Jiang, H X ; Zavada, J MApplied physics letters, 2010-10, Vol.97 (14), p.141109-141109-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyENEN, H ; POMRENKE, G ; AXMANN, A ; EISELE, K ; HAYDL, W ; SCHNEIDER, JApplied physics letters, 1985-01, Vol.46 (4), p.381-383 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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1.54-μm Luminescence of erbium-implanted III-V semiconductors and siliconENNEN, H ; SCHNEIDER, J ; POMRENKE, G ; AXMANN, AApplied physics letters, 1983-01, Vol.43 (10), p.943-945 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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1.55- μ m mode-locked quantum-dot lasers with 300 MHz frequency tuning rangeSadeev, T. ; Arsenijević, D. ; Franke, D. ; Kreissl, J. ; Künzel, H. ; Bimberg, D.Applied physics letters, 2015-01, Vol.106 (3) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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1.55 μm emission from GaInNAs with indium-induced increase of N concentrationZhou, W. ; Uesugi, K. ; Suemune, I.Applied physics letters, 2003-09, Vol.83 (10), p.1992-1994 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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16.5 μ m quantum cascade detector using miniband transportGiorgetta, Fabrizio R ; Baumann, Esther ; Graf, Marcel ; Ajili, Lassaad ; Hoyler, Nicolas ; Giovannini, Marcella ; Faist, Jérôme ; Hofstetter, Daniel ; Krötz, Peter ; Sonnabend, GuidoApplied physics letters, 2007-06, Vol.90 (23), p.231111-231111-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |