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Refinado por: Base de dados/Biblioteca: Institute of Physics IOP Science Extra remover Nome da Publicação: Japanese Journal Of Applied Physics remover assunto: Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices remover
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1
High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
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High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

NAKAMURA, S ; SENOH, M ; IWASA, N ; NAGAHAMA, S.-I

Japanese Journal of Applied Physics, 1995-07, Vol.34 (7A), p.L797-L799 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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2
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices
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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices

NAKAMURA, S ; SENOH, M ; SANO, M ; CHOCHO, K ; NAGAHAMA, S.-I ; IWASA, N ; YAMADA, T ; MATSUSHITA, T ; KIYOKU, H ; SUGIMOTO, Y ; KOZAKI, T ; UMEMOTO, H

Japanese Journal of Applied Physics, 1997-12, Vol.36 (12A), p.L1568-L1571 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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3
InGaN-based multi-quantum-well-structure laser diodes
InGaN-based multi-quantum-well-structure laser diodes
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InGaN-based multi-quantum-well-structure laser diodes

NAKAMURA, S ; SENOH, M ; NAGAHAMA, S.-I ; IWASA, N ; YAMADA, T ; MATSUSHITA, T ; KIYOKU, H ; SUGIMOTO, Y

Japanese Journal of Applied Physics, 1996-01, Vol.35 (1B), p.L74-L76 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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4
GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
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GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

KONDOW, M ; UOMI, K ; NIWA, A ; KITATANI, T ; WATAHIKI, S ; YAZAWA, Y

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.1273-1275 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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5
P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes
P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes
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P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes

NAKAMURA, S ; SENOH, M ; MUKAI, T

Japanese Journal of Applied Physics, 1993, Vol.32 (1A/B), p.L8-L11 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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6
Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask
Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask
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Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask

MASUDA, H ; SATOH, M

Japanese Journal of Applied Physics, 1996-01, Vol.35 (1B), p.L126-L129 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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7
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters

AKASAKI, I ; AMANO, H

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5393-5408 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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8
Superbright green InGaN single-quantum-well-structure light-emitting diodes
Superbright green InGaN single-quantum-well-structure light-emitting diodes
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Superbright green InGaN single-quantum-well-structure light-emitting diodes

NAKAMURA, S ; SENOH, M ; IWASA, N ; NAGAHAMA, S.-I ; YAMADA, T ; MUKAI, T

Japanese Journal of Applied Physics, 1995-10, Vol.34 (10B), p.L1332-L1335 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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9
Theory of semiconductor superjunction devices
Theory of semiconductor superjunction devices
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Theory of semiconductor superjunction devices

FUJIHIRA, T

Japanese Journal of Applied Physics, 1997, Vol.36 (10), p.6254-6262 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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10
Visible-light electroluminescent diodes utilizing poly(3-alkylthiophene)
Visible-light electroluminescent diodes utilizing poly(3-alkylthiophene)
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Visible-light electroluminescent diodes utilizing poly(3-alkylthiophene)

OHMORI, Y ; UCHIDA, M ; MURO, K ; YOSHINO, K

Japanese Journal of Applied Physics, 1991-11, Vol.30 (11B), p.L1938-L1940 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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