Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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An adaptive NS/ES-FEM approach for 2D contact problems using triangular elementsLi, Y. ; Liu, G.R. ; Zhang, G.Y.Finite elements in analysis and design, 2011-03, Vol.47 (3), p.256-275 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Joint power and channel allocation for energy-efficient performance of relay-assisted cognitive radio networks based on energy pricingZHANG, G. Y ; HU, Z ; WANG, C. R ; LI, G. Y ; TIAN, HElectronics letters, 2010-11, Vol.46 (23), p.1571-1573 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |
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3 |
Material Type: Artigo
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Sudden Change of Electrical Characteristics at Lasing Threshold of a Semiconductor LaserFeng, L.F. ; Wang, C.D. ; Cong, H.X. ; Zhu, C.Y. ; Jun Wang ; Xie, X.S. ; Lu, C.Z. ; Zhang, G.Y.IEEE journal of quantum electronics, 2007-06, Vol.43 (6), p.458-461 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Reduction of threading edge dislocation density in n-type GaN by Si delta-dopingPan, Y.B. ; Yang, Z.J. ; Chen, Z.T. ; Lu, Y. ; Yu, T.J. ; Hu, X.D. ; Xu, K. ; Zhang, G.Y.Journal of crystal growth, 2006-01, Vol.286 (2), p.255-258 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor depositionChen, Z.T. ; Xu, K. ; Guo, L.P. ; Yang, Z.J. ; Su, Y.Y. ; Yang, X.L. ; Pan, Y.B. ; Shen, B. ; Zhang, H. ; Zhang, G.Y.Journal of crystal growth, 2006-09, Vol.294 (2), p.156-161 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Influence of Mn-doping on densities of screw-and edge-type threading dislocations in Ga1-xMnxN grown by metal organic chemical vapor depositionCHEN, Z. T ; YANG, X. L ; YANG, Z. J ; ZHAO, H. B ; WANG, C. D ; ZHANG, G. YJournal of crystal growth, 2008-05, Vol.310 (10), p.2444-2449 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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7 |
Material Type: Artigo
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Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaNQIN, Z. X ; CHEN, Z. Z ; TONG, Y. Z ; DING, X. M ; HU, X. D ; YU, T. J ; ZHANG, G. YApplied physics. A, Materials science & processing, 2004-03, Vol.78 (5), p.729-731 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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8 |
Material Type: Artigo
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The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LEDChen, Z.Z. ; Liu, P. ; Qi, S.L. ; Xu, K. ; Qin, Z.X. ; Tong, Y.Z. ; Yu, T.J. ; Hu, X.D. ; Zhang, G.Y.Journal of crystal growth, 2007, Vol.298, p.731-735 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Studies of improving light extraction efficiency of high power blue light-emitting diode by photo-enhanced chemical etchingFang, H. ; Kang, X.N. ; Hu, C.Y. ; Dai, T. ; Chen, Z.Z. ; Qin, Z.X. ; Zhang, B. ; Zhang, G.Y.Journal of crystal growth, 2007, Vol.298, p.703-705 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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An edge-based smoothed finite element method (ES-FEM) for analyzing three-dimensional acoustic problemsHe, Z.C. ; Liu, G.R. ; Zhong, Z.H. ; Wu, S.C. ; Zhang, G.Y. ; Cheng, A.G.Computer methods in applied mechanics and engineering, 2009-12, Vol.199 (1), p.20-33 [Periódico revisado por pares]Kidlington: Elsevier B.VTexto completo disponível |