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Refinado por: assunto: Physics, Applied remover
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1
Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
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Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Lv, Quanshan ; Yan, Faguang ; Mori, Nobuya ; Zhu, Wenkai ; Hu, Ce ; Kudrynskyi, Zakhar R. ; Kovalyuk, Zakhar D. ; Patanè, Amalia ; Wang, Kaiyou

Advanced functional materials, 2020-04, Vol.30 (15), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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2
Electromodulation spectroscopy of highly mismatched alloys
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Electromodulation spectroscopy of highly mismatched alloys

Kudrawiec, Robert ; Walukiewicz, Wladek

Journal of applied physics, 2019-10, Vol.126 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Terahertz emission from a bulk GaSe crystal excited by above bandgap photons
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Terahertz emission from a bulk GaSe crystal excited by above bandgap photons

Norkus, R. ; Nevinskas, I. ; Krotkus, A.

Journal of applied physics, 2020-12, Vol.128 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
On the Piezo‐Phototronic Effect in Si/ZnO Heterojunction Photodiode: The Effect of the Fermi‐Level Difference
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On the Piezo‐Phototronic Effect in Si/ZnO Heterojunction Photodiode: The Effect of the Fermi‐Level Difference

Pan, Zijian ; Peng, Wenbo ; Li, Fangpei ; Cai, Yahui ; He, Yongning

Advanced functional materials, 2020-12, Vol.30 (51), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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5
Through the Lens of a Momentum Microscope: Viewing Light‐Induced Quantum Phenomena in 2D Materials
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Through the Lens of a Momentum Microscope: Viewing Light‐Induced Quantum Phenomena in 2D Materials

Karni, Ouri ; Esin, Iliya ; Dani, Keshav M.

Advanced materials (Weinheim), 2023-07, Vol.35 (27), p.e2204120-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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6
Rotational design of charge carrier transport layers for optimal antimony trisulfide solar cells and its integration in tandem devices
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Rotational design of charge carrier transport layers for optimal antimony trisulfide solar cells and its integration in tandem devices

Cao, Yu ; Zhu, Xinyun ; Jiang, Jiahao ; Liu, Chaoying ; Zhou, Jing ; Ni, Jian ; Zhang, Jianjun ; Pang, Jinbo

Solar energy materials and solar cells, 2020-03, Vol.206, p.110279, Article 110279 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor-Analytical Model
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Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor-Analytical Model

Goel, Anubha ; Rewari, Sonam ; Verma, Seema ; Gupta, R. S.

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2437-2445 [Periódico revisado por pares]

New York: IEEE

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8
Giant momentum-dependent spin splitting in centrosymmetric low- Z antiferromagnets
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Giant momentum-dependent spin splitting in centrosymmetric low- Z antiferromagnets

Yuan, Lin-Ding ; Wang, Zhi ; Luo, Jun-Wei ; Rashba, Emmanuel I. ; Zunger, Alex

Physical review. B, 2020-07, Vol.102 (1), p.1, Article 014422 [Periódico revisado por pares]

College Park: American Physical Society

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9
An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions
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An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Rather, Muzafar Ahmad ; Ravi, Loganathan ; Yu, Tung-Yuan ; Wu, Chien-Ting ; Lin, Kun-Lin ; Lai, Kun-Yu ; Chyi, Jen-Inn

Applied physics letters, 2023-07, Vol.123 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor
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Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor

Najam, Faraz ; Yu, Yun Seop

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.2010-2016 [Periódico revisado por pares]

New York: IEEE

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