Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Improvement of luminescence properties of Ca sub(0.8)Zn sub(0.2)TiO sub(3):Pr super(3+) prepared by hydrothermal methodYu, Liping ; Xia, Mao ; Chen, Xun ; Rong, Chunying ; Zhang, Jinlin ; Zhou, Wenli ; Ma, Ming ; Lian, ShixunJournal of materials research, 2013-09, Vol.28 (18), p.2590-2597 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Upconversion emission and paramagnetism of colloid Ba sub(2)ErF sub(7) and Ba sub(2)ErF sub(7):Yb super(3+) nanocrystals synthesized with solvothermal methodGong, Lunjun ; Ma, Mo ; Xu, Changfu ; Lin, Jianguo ; Yang, QibinJournal of Wuhan University of Technology. Materials science edition, 2013-12, Vol.28 (6), p.1076-1081 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1DMohandes, Aminreza ; Moradi, Mahmood ; Nadgaran, HamidOptical and quantum electronics, 2021-06, Vol.53 (6), Article 319 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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4 |
Material Type: Artigo
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Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like C 2 N Nanosheet by Strain EngineeringPhuc, Huynh V ; Tuan, Vu V ; Hieu, Nguyen N ; Ilyasov, Victor V ; Fedorov, Igor A ; Hoi, Bui D ; Phuong, Le T T ; Hieu, Nguyen V ; Feddi, Elmustapha ; Nguyen, Chuong VJournal of electronic materials, 2018-08, Vol.47 (8), p.4594-4603 [Periódico revisado por pares]Warrendale: Springer Nature B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Elastic and Optoelectronic Properties of Cs2NaMCl6 (M = In, Tl, Sb, Bi)Khan, Imad ; Shahab ; Haq, Izaz Ul ; Ali, Akbar ; Ali, Zahid ; Ahmad, IftikharJournal of electronic materials, 2021-02, Vol.50 (2), p.456-466 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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6 |
Material Type: Artigo
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The band gap energy of the dilute nitride alloy GaN x As y P1−x−y (0 ≤ x ≤ 0.07, 0 ≤ y ≤ 1) depending on contentChuan-Zhen Zhao ; Min-Min, Zhu ; Xiao-Dong, Sun ; Sha-Sha, Wang ; Wang, JunApplied physics. A, Materials science & processing, 2018-01, Vol.124 (2), p.1-6 [Periódico revisado por pares]Heidelberg: Springer Nature B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Investigation of the electronic structural and optical properties of CH3NH3HgI3 crystalYao, Ming ; Xu, Gang ; Zhang, Mingtao ; Zhang, Binbin ; Zhu, Jinmeng ; Wang, ChunhaiJournal of molecular modeling, 2022-09, Vol.28 (9), p.255-255, Article 255 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
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8 |
Material Type: Artigo
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The factors determining the band gap energy of the As-rich GaBi x As1−xChuan-Zhen Zhao ; Tong, Wei ; Xiao-Dong, Sun ; Sha-Sha, Wang ; Wang, JunApplied physics. A, Materials science & processing, 2019-01, Vol.125 (2), p.1-5 [Periódico revisado por pares]Heidelberg: Springer Nature B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaN x Bi y As1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)Chuan-Zhen Zhao ; He-Yu, Ren ; Tong, Wei ; Sha-Sha, Wang ; Ke-Qing LuJournal of electronic materials, 2018-08, Vol.47 (8), p.4539-4543 [Periódico revisado por pares]Warrendale: Springer Nature B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactionsZhu, Huili ; Hong, Zifan ; Zhou, Changjie ; Wu, Qihui ; Zheng, Tongchang ; Yang, Lan ; Lan, Shuqiong ; Yang, WeifengFrontiers of physics, 2023-02, Vol.18 (1), p.13301, Article 13301 [Periódico revisado por pares]Beijing: Higher Education PressTexto completo disponível |