Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrateOikawa, Takuya ; Saijo, Yusuke ; Kato, Shigeki ; Mishima, Tomoyoshi ; Nakamura, TohruNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.168-170 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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2 |
Material Type: Dissertação de Mestrado
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Investigation of the fs-micromachining process in GaN and diamondNolasco, Lucas KonakaBiblioteca Digital de Teses e Dissertações da USP; Universidade de São Paulo; Escola de Engenharia de São Carlos 2021-02-19Acesso online |
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3 |
Material Type: Artigo
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layerZhang, Zi-Hui ; Tan, Swee Tiam ; Liu, Wei ; Ju, Zhengang ; Zheng, Ke ; Kyaw, Zabu ; Ji, Yun ; Hasanov, Namig ; Sun, Xiao Wei ; Demir, Hilmi VolkanOptics express, 2013-02, Vol.21 (4), p.4958-4969 [Periódico revisado por pares]United StatesTexto completo disponível |
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4 |
Material Type: Artigo
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Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate DielectricsKanamura, M. ; Ohki, T. ; Kikkawa, T. ; Imanishi, K. ; Imada, T. ; Yamada, A. ; Hara, N.IEEE electron device letters, 2010-03, Vol.31 (3), p.189-191 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environmentsLuo, Shisong ; Fu, Kai ; Xie, Qingyun ; Yuan, Mengyang ; Gao, Guanhui ; Guo, Hua ; Xu, Rui ; Giles, Noah ; Li, Tao ; Mei, Zhaobo ; Xu, Mingfei ; Zhou, Jingan ; He, Ziyi ; Chang, Cheng ; Zhu, Hanyu ; Palacios, Tomás ; Zhao, YujiApplied physics letters, 2023-12, Vol.123 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Over 1.0 kV GaN p-n junction diodes on free-standing GaN substratesNomoto, Kazuki ; Hatakeyama, Yoshitomo ; Katayose, Hideo ; Kaneda, Naoki ; Mishima, Tomoyoshi ; Nakamura, TohruPhysica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1535-1537 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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7 |
Material Type: Artigo
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Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substratesPasayat, Shubhra S. ; Ley, Ryan ; Gupta, Chirag ; Wong, Matthew S. ; Lynsky, Cheyenne ; Wang, Yifan ; Gordon, Michael J. ; Nakamura, Shuji ; Denbaars, Steven P. ; Keller, Stacia ; Mishra, Umesh K.Applied physics letters, 2020-08, Vol.117 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part-II: Modeling of Charge TrappingAlbahrani, Sayed Ali ; Mahajan, Dhawal ; Hodges, Jason ; Chauhan, Yogesh Singh ; Khandelwal, SourabhIEEE transactions on electron devices, 2019-01, Vol.66 (1), p.87-94 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Large scale fabrication of GaN nanorods template and characterization of MOCVD grown InGaN/GaN quantum wells on {101‾0} plane of GaN nanorodsKulkarni, Mandar A. ; Ryu, Hyesu ; Choi, Hak-Jong ; Abdullah, Ameer ; Thaalbi, Hamza ; Tariq, Fawad ; Lee, Sang Hyun ; Lim, Hyungjun ; Ryu, Sang-WanOptical materials, 2023-11, Vol.145, p.114488, Article 114488 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBESeredin, P.V. ; Goloshchapov, D.L. ; Kostomakha, D.E. ; Peshkov, Y.A. ; Buylov, N.S. ; Ivkov, S.A. ; Mizerov, A.M. ; Timoshnev, S.N. ; Sobolev, M.S. ; Ubyivovk, E.V. ; Zemlyakov, V.I.Optical materials, 2024-06, Vol.152, Article 115471 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |