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Refinado por: tipo de recurso: Artigos remover Base de dados/Biblioteca: Institute of Physics IOPscience extra remover
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1
Double Injection in p -Type Silicon
Double Injection in p -Type Silicon
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Artigo 		Adicionar ao Meu Espaço

Double Injection in p -Type Silicon

Hiramatsu, Makoto

Japanese Journal of Applied Physics, 1973, Vol.12 (3), p.415-422 [Periódico revisado por pares]

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2
The phase transition pressures of zincsulfoselenide single crystals
The phase transition pressures of zincsulfoselenide single crystals
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The phase transition pressures of zincsulfoselenide single crystals

TIONG, S. R ; HIRAMATSU, M ; MATSUSHIMA, Y ; ITO, E

Japanese Journal of Applied Physics, 1989-02, Vol.28 (2), p.291-292 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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3
Large-Capacity and High-Speed Magnetic Field Modulation Recording for 3.5 ′′ Magneto-Optical Disk Drive
Large-Capacity and High-Speed Magnetic Field Modulation Recording for 3.5 ′′ Magneto-Optical Disk Drive
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Large-Capacity and High-Speed Magnetic Field Modulation Recording for 3.5 ′′ Magneto-Optical Disk Drive

Hiramatsu, Makoto ; ishii, kazuyoshi ; Miyaoka, Yasuyuki ; Kimura, Syunpei ; Miyajima, Yoshikazu ; Tachibana, Shinichi ; Hasegawa, Koyo

Japanese Journal of Applied Physics, 1992-02, Vol.31 (Part 1, No. 2B), p.635-637, Article 635 [Periódico revisado por pares]

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4
Experimental Investigation of Double Injection in p-Type Silicon
Experimental Investigation of Double Injection in p-Type Silicon
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Experimental Investigation of Double Injection in p-Type Silicon

Okazaki, Susumu ; Hiramatsu, Makoto

Japanese Journal of Applied Physics, 1968-05, Vol.7 (5), p.557 [Periódico revisado por pares]

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5
Carrier Density and Mobility Obtained from Space-Charge-Limited Current in P-Type Silicon
Carrier Density and Mobility Obtained from Space-Charge-Limited Current in P-Type Silicon
Material Type:
Artigo 		Adicionar ao Meu Espaço

Carrier Density and Mobility Obtained from Space-Charge-Limited Current in P-Type Silicon

Okazaki, Susumu ; Hiramatsu, Makoto

Japanese Journal of Applied Physics, 1966-01, Vol.5 (6), p.555 [Periódico revisado por pares]

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6
Double Injection in Trap-Free Silicon at High Operating Points
Double Injection in Trap-Free Silicon at High Operating Points
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Double Injection in Trap-Free Silicon at High Operating Points

Hiramatsu, Makoto ; Kusaka, Masahiko ; Okazaki, Susumu

Japanese Journal of Applied Physics, 1970-01, Vol.9 (7), p.854 [Periódico revisado por pares]

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7
Impurity levels of alkaline metals in zincselenide single crystals examined by photoluminescence
Impurity levels of alkaline metals in zincselenide single crystals examined by photoluminescence
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Impurity levels of alkaline metals in zincselenide single crystals examined by photoluminescence

YOSHINO, K ; MATSUSHIMA, Y ; HIRAMATSU, M

Japanese Journal of Applied Physics, 1995-01, Vol.34 (1), p.61-65 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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