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1
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 631-633, 2003

Oxford 2003

Acesso online

2
Coupled rate equation modeling of self-assembled quantum dot photoluminescence
Coupled rate equation modeling of self-assembled quantum dot photoluminescence
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Coupled rate equation modeling of self-assembled quantum dot photoluminescence

F V de Sales J M R Cruz; S W da Silva; M A G Soler; P C Morais; M J da Silva; A. A Quivy (Alain André); J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 705-707, 2003

Oxford 2003

Acesso online

3
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 631-633, 2003

Oxford 2003

Acesso online

4
Coupled rate equation modeling of self-assembled quantum dot photoluminescence
Coupled rate equation modeling of self-assembled quantum dot photoluminescence
Material Type:
Artigo 		Adicionar ao Meu Espaço

Coupled rate equation modeling of self-assembled quantum dot photoluminescence

F V de Sales J M R Cruz; S W da Silva; M A G Soler; P C Morais; M J da Silva; A. A Quivy (Alain André); J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 705-707, 2003

Oxford 2003

Acesso online

5
Morphological and optical properties of p-type GaAs(001) layers doped with silicon
Morphological and optical properties of p-type GaAs(001) layers doped with silicon
Material Type:
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Morphological and optical properties of p-type GaAs(001) layers doped with silicon

T. E. Lamas (Tomás Erikson) S Martini; M J da Silva; A. A Quivy (Alain André); J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 701-703, 2003

Oxford 2003

Acesso online

6
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well
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Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well

C. S. Sérgio (Cássio Sanguini) Guennadii Michailovich Gusev; A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); J. R Leite (José Roberto); O Estibals; J C Portal

Microelectronics Journal Oxford v. 34, n. 5-8, p. 763-766, 2003

Oxford 2003

Acesso online

7
Morphological and optical properties of p-type GaAs(001) layers doped with silicon
Morphological and optical properties of p-type GaAs(001) layers doped with silicon
Material Type:
Artigo 		Adicionar ao Meu Espaço

Morphological and optical properties of p-type GaAs(001) layers doped with silicon

T. E. Lamas (Tomás Erikson) S Martini; M J da Silva; A. A Quivy (Alain André); J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 701-703, 2003

Oxford 2003

Acesso online

8
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well
Material Type:
Artigo 		Adicionar ao Meu Espaço

Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well

C. S. Sérgio (Cássio Sanguini) Guennadii Michailovich Gusev; A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); J. R Leite (José Roberto); O Estibals; J C Portal

Microelectronics Journal Oxford v. 34, n. 5-8, p. 763-766, 2003

Oxford 2003

Acesso online

9
Confined excitons in 'Si/SrTiO IND.3' quantum wells
Confined excitons in 'Si/SrTiO IND.3' quantum wells
Material Type:
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Confined excitons in 'Si/SrTiO IND.3' quantum wells

T A S Pereira J A K Freire; V N Freire; G A Farias; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); E F da Silva Junior

Microelectronics Journal Oxford v. 34, 5-8, p. 507-509, 2003

Oxford 2003

Acesso online

10
Confined excitons in 'Si/SrTiO IND.3' quantum wells
Confined excitons in 'Si/SrTiO IND.3' quantum wells
Material Type:
Artigo 		Adicionar ao Meu Espaço

Confined excitons in 'Si/SrTiO IND.3' quantum wells

T A S Pereira J A K Freire; V N Freire; G A Farias; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); E F da Silva Junior

Microelectronics Journal Oxford v. 34, 5-8, p. 507-509, 2003

Oxford 2003

Acesso online

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Deste Autor:

  1. Leite, J
  2. Quivy, A
  3. Silva, M
  4. Lamas, T
  5. Scolfaro, L

Neste Assunto:

  1. Estrutura Eletrônica
  2. Dispositivos Eletrônicos
  3. Microeletrônica
  4. Termodinâmica
  5. Fotoluminescência

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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