Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Parameter extraction and modelling of the MOS transistor by an equivalent resistanceSharroush, Sherif M. ; Abdalla, Yasser S.Mathematical and computer modelling of dynamical systems, 2021-01, Vol.27 (1), p.50-86 [Periódico revisado por pares]Abingdon: Taylor & FrancisTexto completo disponível |
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2 |
Material Type: Artigo
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80-dB Microwave Noise from an Avalanche Transistor CircuitMykolaitis, Gytis ; Kersulis, Saulius ; Bumeliene, Skaidra ; Tamasevicius, ArunasElektronika ir elektrotechnika, 2015-01, Vol.21 (5), p.40 [Periódico revisado por pares]Kaunas University of Technology, Faculty of Telecommunications and ElectronicsTexto completo disponível |
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3 |
Material Type: Artigo
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Recent advanced applications of ion-gel in ionic-gated transistorWang, Depeng ; Zhao, Shufang ; Yin, Ruiyang ; Li, Linlin ; Lou, Zheng ; Shen, GuozhenNpj flexible electronics, 2021-06, Vol.5 (1), p.1-16, Article 13 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
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4 |
Material Type: Artigo
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A single-phase full-bridge soft-switching inverter circuit with an auxiliary resonant circuitYang, C C ; Zeng, T H ; Huang, C W ; Hsu, W TJournal of physics. Conference series, 2023-11, Vol.2631 (1), p.12010 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Class AB tunable active inductorPantoli, L ; Stornelli, V ; Leuzzi, GElectronics letters, 2015-01, Vol.51 (1), p.65-67 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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6 |
Material Type: Artigo
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Innovative Design of Bismuth-Telluride-Based Thermoelectric TransistorsDeng, Hao ; Nan, Bohang ; Xu, GuiyingMaterials, 2023-08, Vol.16 (16), p.5536 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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7 |
Material Type: Artigo
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Wide-tuning range programmable threshold comparator using capacitive source-voltage shiftingMartens, E ; Hershberg, B ; Craninckx, JElectronics letters, 2018-12, Vol.54 (25), p.1417-1418 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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8 |
Material Type: Artigo
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An Investigation of Process Variations and Mismatch Characteristics of Vertical Bipolar Junction TransistorsLiu, Xiaonian ; Yang, ZichenIEEE access, 2023-01, Vol.11, p.1-1 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Efficient active multiplier-based signal source for >300 GHz system applicationsHossain, M ; Boppel, S ; Heinrich, W ; Krozer, VElectronics letters, 2019-11, Vol.55 (23), p.1220-1221 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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10 |
Material Type: Artigo
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Transilient Response to Acetone Gas Using the Interlocking p+n Field-Effect Transistor CircuitZhou, Xinyuan ; Wang, Jinxiao ; Wang, Zhou ; Bian, Yuzhi ; Wang, Ying ; Han, Ning ; Chen, YunfaSensors (Basel, Switzerland), 2018-06, Vol.18 (6), p.1914 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |