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21
Electric field modulation of electronic structures in InSe and black phosphorus heterostructure
Electric field modulation of electronic structures in InSe and black phosphorus heterostructure
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Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

Ding, Yi-min ; Shi, Jun-jie ; Zhang, Min ; Xia, Congxin ; Wu, Meng ; Wang, Hui ; Cen, Yu-lang ; Pan, Shu-hang

Solid state communications, 2018-01, Vol.269, p.112-117 [Periódico revisado por pares]

Elsevier Ltd

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22
Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells
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Interface optical-phonon modes and electron–interface-phonon interactions in wurtzite GaN/AlN quantum wells

Shi, Jun-jie

Physical review. B, Condensed matter, 2003-10, Vol.68 (16), Article 165335 [Periódico revisado por pares]

Sem texto completo

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23
Coronavirus disease 19 with gastrointestinal symptoms as initial manifestations: a case report
Coronavirus disease 19 with gastrointestinal symptoms as initial manifestations: a case report
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Coronavirus disease 19 with gastrointestinal symptoms as initial manifestations: a case report

Wu, Chun-Yang ; Yu, Xiao-Pin ; Ma, Ada Hoi Yan ; Wang, Li-Ping ; Yang, Nai-Bin ; Li, Guo-Xiang ; Shi, Jie-Jun ; Qian, Guo-Qing

Journal of international medical research, 2020-09, Vol.48 (9), p.300060520952256-300060520952256 [Periódico revisado por pares]

London, England: SAGE Publications

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24
Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability
Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability
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Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability

Du, Juan ; Jun-jie, Shi ; Jin-xiang, Deng ; Cong-xin Xia

Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-03, Vol.12 (10), p.3698-3707 [Periódico revisado por pares]

Cambridge: Royal Society of Chemistry

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25
Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots
Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots
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Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Shi, Jun-jie ; Gan, Zi-zhao

Journal of applied physics, 2003-07, Vol.94 (1), p.407-415 [Periódico revisado por pares]

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26
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes
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Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes

Xue, Yongzhou ; Wang, Hui ; Tan, Qinghai ; Zhang, Jun ; Yu, Tongjun ; Ding, Kun ; Jiang, Desheng ; Dou, Xiuming ; Shi, Jun-jie ; Sun, Bao-quan

ACS nano, 2018-07, Vol.12 (7), p.7127-7133 [Periódico revisado por pares]

United States: American Chemical Society

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27
Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation
Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation
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Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

Jiang, Xin-he ; Shi, Jun-jie ; Zhang, Min ; Zhong, Hong-xia ; Huang, Pu ; Ding, Yi-min ; Yu, Tong-jun ; Shen, Bo ; Lu, Jing ; Wang, Xihua

New journal of physics, 2014-11, Vol.16 (11), p.113065 [Periódico revisado por pares]

Bristol: IOP Publishing

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28
Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap
Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap
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Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap

Wang, Hui ; Shi, Jun-jie ; Huang, Pu ; Ding, Yi-min ; Wu, Meng ; Cen, Yu-lang ; Yu, Tongjun

Physica. E, Low-dimensional systems & nanostructures, 2018-04, Vol.98, p.66-73 [Periódico revisado por pares]

Elsevier B.V

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29
2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1
2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1
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2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1

Du, Juan ; Shi, Jun‐jie

Advanced materials (Weinheim), 2019-12, Vol.31 (51), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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30
Promising Lead-Free Double-Perovskite Photovoltaic Materials Cs2MM′Br6 (M = Cu, Ag, and Au; M′ = Ga, In, Sb, and Bi) with an Ideal Band Gap and High Power Conversion Efficiency
Promising Lead-Free Double-Perovskite Photovoltaic Materials Cs2MM′Br6 (M = Cu, Ag, and Au; M′ = Ga, In, Sb, and Bi) with an Ideal Band Gap and High Power Conversion Efficiency
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Promising Lead-Free Double-Perovskite Photovoltaic Materials Cs2MM′Br6 (M = Cu, Ag, and Au; M′ = Ga, In, Sb, and Bi) with an Ideal Band Gap and High Power Conversion Efficiency

Wang, Kai-qi ; He, Yong ; Zhang, Min ; Shi, Jun-jie ; Cai, Wen-wen

Journal of physical chemistry. C, 2021-09, Vol.125 (38), p.21160-21168 [Periódico revisado por pares]

American Chemical Society

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