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Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD
Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD
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Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD

Jiang, Kunyao ; Tang, Jingyu ; Cabral, Matthew J. ; Park, Anna ; Gu, Liuxin ; Davis, Robert F. ; Porter, Lisa M.

Journal of applied physics, 2022-02, Vol.131 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Silver-induced layer exchange and crystallization of a-Si films investigated using in situ scanning transmission electron microscopy
Silver-induced layer exchange and crystallization of a-Si films investigated using in situ scanning transmission electron microscopy
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Silver-induced layer exchange and crystallization of a-Si films investigated using in situ scanning transmission electron microscopy

Yadav, Surbhi ; Birajdar, B. I. ; Kraschewski, S. M. ; Apeleo Zubiri, B. ; Antesberger, T. ; Stutzmann, M. ; Spiecker, E.

Journal of applied physics, 2024-08, Vol.136 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Wide range doping control and defect characterization of GaN layers with various Mg concentrations
Wide range doping control and defect characterization of GaN layers with various Mg concentrations
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Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Tetsuo, Narita ; Nobuyuki, Ikarashi ; Kazuyoshi, Tomita ; Keita, Kataoka ; Tetsu, Kachi

Journal of applied physics, 2018-10, Vol.124 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers
Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers
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Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers

Gundimeda, Abhiram ; Frentrup, Martin ; Fairclough, Simon M. ; Kappers, Menno J. ; Wallis, David J. ; Oliver, Rachel A.

Journal of applied physics, 2022-03, Vol.131 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Considerations for extracting moiré-level strain from dark field intensities in transmission electron microscopy
Considerations for extracting moiré-level strain from dark field intensities in transmission electron microscopy
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Considerations for extracting moiré-level strain from dark field intensities in transmission electron microscopy

Craig, Isaac M. ; Van Winkle, Madeline ; Ophus, Colin ; Bediako, D. Kwabena

Journal of applied physics, 2024-08, Vol.136 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors
Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors
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Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

Ghose, Susmita ; Rahman, Shafiqur ; Hong, Liang ; Rojas-Ramirez, Juan Salvador ; Jin, Hanbyul ; Park, Kibog ; Klie, Robert ; Droopad, Ravi

Journal of applied physics, 2017-09, Vol.122 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Room-temperature single phase multiferroic magnetoelectrics: Pb(Fe, M)x(Zr,Ti)(1−x)O3 [M = Ta, Nb]
Room-temperature single phase multiferroic magnetoelectrics: Pb(Fe, M)x(Zr,Ti)(1−x)O3 [M = Ta, Nb]
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Room-temperature single phase multiferroic magnetoelectrics: Pb(Fe, M)x(Zr,Ti)(1−x)O3 [M = Ta, Nb]

Sanchez, Dilsom A. ; Ortega, Nora ; Kumar, Ashok ; Sreenivasulu, G. ; Katiyar, Ram S. ; Scott, J. F. ; Evans, Donald M. ; Arredondo-Arechavala, Miryam ; Schilling, A. ; Gregg, J. M.

Journal of applied physics, 2013-02, Vol.113 (7) [Periódico revisado por pares]

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8
Molecular structure of vapor-deposited amorphous selenium
Molecular structure of vapor-deposited amorphous selenium
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Molecular structure of vapor-deposited amorphous selenium

Goldan, A. H. ; Li, C. ; Pennycook, S. J. ; Schneider, J. ; Blom, A. ; Zhao, W.

Journal of applied physics, 2016-10, Vol.120 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Effect of high-pressure torsion on the microstructure and thermoelectric properties of Fe2VAl-based compounds
Effect of high-pressure torsion on the microstructure and thermoelectric properties of Fe2VAl-based compounds
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Effect of high-pressure torsion on the microstructure and thermoelectric properties of Fe2VAl-based compounds

Masuda, S. ; Tsuchiya, K. ; Qiang, J. ; Miyazaki, H. ; Nishino, Y.

Journal of applied physics, 2018-07, Vol.124 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
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Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

Mirabelli, Gioele ; McGeough, Conor ; Schmidt, Michael ; McCarthy, Eoin K. ; Monaghan, Scott ; Povey, Ian M. ; McCarthy, Melissa ; Gity, Farzan ; Nagle, Roger ; Hughes, Greg ; Cafolla, Attilio ; Hurley, Paul K. ; Duffy, Ray

Journal of applied physics, 2016-09, Vol.120 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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