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Refinado por: Nome da Publicação: Ieee Transactions On Electron Devices remover
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Hybrid Design Using Metal-Oxide- Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications
Hybrid Design Using Metal-Oxide- Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications
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Hybrid Design Using Metal-Oxide- Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications

Han, Kaizhen ; Sun, Chen ; Kong, Eugene Yu Jin ; Wu, Ying ; Heng, Chun-Huat ; Gong, Xiao

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.846-852 [Periódico revisado por pares]

New York: IEEE

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2
Large-Signal Model of Graphene Field- Effect Transistors-Part II: Circuit Performance Benchmarking
Large-Signal Model of Graphene Field- Effect Transistors-Part II: Circuit Performance Benchmarking
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Large-Signal Model of Graphene Field- Effect Transistors-Part II: Circuit Performance Benchmarking

Pasadas, Francisco ; Jimenez, David

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2942-2947 [Periódico revisado por pares]

New York: IEEE

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3
Fast PEALD ZnO Thin-Film Transistor Circuits
Fast PEALD ZnO Thin-Film Transistor Circuits
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Fast PEALD ZnO Thin-Film Transistor Circuits

Mourey, D.A. ; Zhao, D.A. ; Jie Sun ; Jackson, T.N.

IEEE transactions on electron devices, 2010-02, Vol.57 (2), p.530-534 [Periódico revisado por pares]

New York, NY: IEEE

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4
Eco-Friendly Fully Water-Driven HfGdO } Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits
Eco-Friendly Fully Water-Driven HfGdO } Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits
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Eco-Friendly Fully Water-Driven HfGdO } Gate Dielectrics and Its Application in Thin-Film Transistors and Logic Circuits

Zhang, Chong ; He, Gang ; Fang, Zebo ; Zhang, Yongchun ; Xia, Yufeng ; Yang, Bing ; Wang, Wenhao ; Alam, Fakhari ; Cui, Jingbiao

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1001-1008 [Periódico revisado por pares]

New York: IEEE

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5
Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits-DC Analysis and Modeling Toward Optimum Transistor Structure
Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits-DC Analysis and Modeling Toward Optimum Transistor Structure
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Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits-DC Analysis and Modeling Toward Optimum Transistor Structure

Raychowdhury, A. ; Keshavarzi, A. ; Kurtin, J. ; De, V. ; Roy, K.

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2711-2717 [Periódico revisado por pares]

New York, NY: IEEE

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6
A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits
A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits
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A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits

Vatsyayan, Ritwik ; Dayeh, Shadi A.

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.1-8 [Periódico revisado por pares]

United States: IEEE

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7
Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects
Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects
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Macromodel for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects

Leise, Jakob ; Pruefer, Jakob ; Nikolaou, Aristeidis ; Darbandy, Ghader ; Klauk, Hagen ; Iniguez, Benjamin ; Kloes, Alexander

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4672-4676 [Periódico revisado por pares]

New York: IEEE

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8
Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits
Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits
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Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits

Kato, Kimihiko ; Tanamoto, Tetsufumi ; Mori, Takahiro ; Morita, Yukinori ; Matsukawa, Takashi ; Takenaka, Mitsuru ; Takagi, Shinichi

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3876-3882 [Periódico revisado por pares]

New York: IEEE

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9
Analytical Models for Delay and Power Analysis of Zero- \(V_{\mathrm {GS}}\) Load Unipolar Thin-Film Transistor Logic Circuits
Analytical Models for Delay and Power Analysis of Zero- \(V_{\mathrm {GS}}\) Load Unipolar Thin-Film Transistor Logic Circuits
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Analytical Models for Delay and Power Analysis of Zero- \(V_{\mathrm {GS}}\) Load Unipolar Thin-Film Transistor Logic Circuits

Cui, Qingyu ; Sporea, Radu A ; Liu, Wenjiang ; Guo, Xiaojun

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3838-3844 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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10
Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer
Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer
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Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

Nosaeva, Ksenia ; Al-Sawaf, Thualfiqar ; John, Wilfred ; Stoppel, Dimitri ; Rudolph, Matthias ; Schmuckle, Franz-Josef ; Janke, Bernd ; Kruger, Olaf ; Krozer, Viktor ; Heinrich, Wolfgang ; Weimann, Nils G.

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1846-1852 [Periódico revisado por pares]

New York: IEEE

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