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Refinado por: idioma: Russo remover Base de dados/Biblioteca: Science Citation Index Expanded (Web of Science) remover Nome da Publicação: Journal Of Crystal Growth remover
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1
Numerical investigation of heat and mass transfer during vertical Bridgman crystal growth under rotational vibrations
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Numerical investigation of heat and mass transfer during vertical Bridgman crystal growth under rotational vibrations

Lyubimova, T.P. ; Parshakova, Ya.N.

Journal of crystal growth, 2014-01, Vol.385, p.82-87 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells
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Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells

Kuliev, A.T. ; Durnev, N.V. ; Kalaev, V.V.

Journal of crystal growth, 2007-05, Vol.303 (1), p.236-240 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth
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Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth

Lukanin, D.P. ; Kalaev, V.V. ; Makarov, Yu.N. ; Wetzel, T. ; Virbulis, J. ; von Ammon, W.

Journal of crystal growth, 2004-05, Vol.266 (1), p.20-27 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Segregation control of vertical Bridgman growth of Ga-doped germanium crystals by accelerated crucible rotation: ACRT versus angular vibration
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Segregation control of vertical Bridgman growth of Ga-doped germanium crystals by accelerated crucible rotation: ACRT versus angular vibration

Wang, L.C. ; Liu, Y.C. ; Yu, W.C. ; Roux, B. ; Lyubimova, T.P. ; Lan, C.W.

Journal of crystal growth, 2009-01, Vol.311 (3), p.684-687 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions
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Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions

Serebryakov, Yu.A. ; Prokhorov, I.A. ; Vlasov, V.N. ; Korobeynikova, E.N. ; Zakharov, B.G. ; Shul’pina, I.L. ; Marchenko, M.P. ; Fryazinov, I.V.

Journal of crystal growth, 2007-06, Vol.304 (1), p.11-21 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Reversing radial segregation and suppressing morphological instability during Bridgman crystal growth by angular vibration
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Reversing radial segregation and suppressing morphological instability during Bridgman crystal growth by angular vibration

Yu, W.C. ; Chen, Z.B. ; Hsu, W.T. ; Roux, B. ; Lyubimova, T.P. ; Lan, C.W.

Journal of crystal growth, 2004-11, Vol.271 (3), p.474-480 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Education and tutorial in modeling of elementary flows, heat and mass transfer during crystal growth in ground-based and microgravity environment
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Education and tutorial in modeling of elementary flows, heat and mass transfer during crystal growth in ground-based and microgravity environment

Ermakov, M.K. ; Nikitin, S.A. ; Polezhaev, V.I. ; Yaremchuk, V.P.

Journal of crystal growth, 2004-05, Vol.266 (1), p.388-395 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Numerical modeling of contact-free control over crystal growth heat–mass transfer processes through heat field rotation
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Numerical modeling of contact-free control over crystal growth heat–mass transfer processes through heat field rotation

Kokh, A.E. ; Popov, V.N. ; Mokrushnikov, P.W.

Journal of crystal growth, 2001-08, Vol.230 (1), p.155-163 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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