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1
Electrical properties of CuxZnySnS4 films with different Cu/Zn ratios
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Artigo
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Electrical properties of CuxZnySnS4 films with different Cu/Zn ratios

Ruan, Cheng-He ; Huang, Chung-Cheng ; Lin, Yow-Jon ; He, Guan-Ru ; Chang, Hsing-Cheng ; Chen, Ya-Hui

Thin solid films, 2014-01, Vol.550, p.525-529 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Enhancement of carrier mobility in poly(3-hexylthiophene) by incorporating ZnO nanoparticles
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Enhancement of carrier mobility in poly(3-hexylthiophene) by incorporating ZnO nanoparticles

Chin, Yi-Min ; Lin, Yow-Jon ; Liu, Day-Shan

Thin solid films, 2013-12, Vol.548, p.453-455 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Effects of H2O2 treatment on the optical and structural properties of ZnO nanorods and the electrical properties of conductive polymer/ZnO-nanorod array diodes
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Effects of H2O2 treatment on the optical and structural properties of ZnO nanorods and the electrical properties of conductive polymer/ZnO-nanorod array diodes

Yang, Shih-Hung ; Lin, Yow-Jon ; Chang, Hsing-Cheng ; Chen, Ya-Hui

Thin solid films, 2013-10, Vol.545, p.476-479 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol–gel and thermally grown methods
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Artigo
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Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol–gel and thermally grown methods

Dai, Chi-Jie ; Tsao, Hou-Yen ; Lin, Yow-Jon ; Liu, Day-Shan

Thin solid films, 2014-02, Vol.552, p.159-163 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment
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Artigo
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Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

Lin, Jian-Huang ; Zeng, Jian-Jhou ; Lin, Yow-Jon

Thin solid films, 2014-01, Vol.550, p.582-586 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes
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Artigo
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Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

He, Guan-Ru ; Lin, Yow-Jon ; Chang, Hsing-Cheng ; Chen, Ya-Hui

Thin solid films, 2012-12, Vol.525, p.154-157 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance
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Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance

Wu, Chang-Lin ; Lin, Yow-Jon

Indian journal of physics, 2018-12, Vol.92 (12), p.1533-1539 [Periódico revisado por pares]

New Delhi: Springer India

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8
Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymer
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Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymer

Lin, Yow-Jon ; Jheng, Mei-Jyuan ; Zeng, Jian-Jhou

Applied surface science, 2010-05, Vol.256 (14), p.4493-4496 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatment
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Artigo
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Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatment

Lin, Yow-Jon ; Chu, Jian-An ; Su, Yu-Chao ; Lee, Ching-Ting ; Chang, Hsing-Cheng

Thin solid films, 2010-03, Vol.518 (10), p.2707-2709 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester: Black phosphorus/p-type Si devices
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Artigo
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Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester: Black phosphorus/p-type Si devices

Lin, Yow-Jon ; Lin, Hong-Zhi ; Tang, Zhi-Hui ; Chang, Hsing-Cheng

Microelectronic engineering, 2016-12, Vol.166, p.5-9 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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