Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Electrical properties of CuxZnySnS4 films with different Cu/Zn ratiosRuan, Cheng-He ; Huang, Chung-Cheng ; Lin, Yow-Jon ; He, Guan-Ru ; Chang, Hsing-Cheng ; Chen, Ya-HuiThin solid films, 2014-01, Vol.550, p.525-529 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Enhancement of carrier mobility in poly(3-hexylthiophene) by incorporating ZnO nanoparticlesChin, Yi-Min ; Lin, Yow-Jon ; Liu, Day-ShanThin solid films, 2013-12, Vol.548, p.453-455 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Effects of H2O2 treatment on the optical and structural properties of ZnO nanorods and the electrical properties of conductive polymer/ZnO-nanorod array diodesYang, Shih-Hung ; Lin, Yow-Jon ; Chang, Hsing-Cheng ; Chen, Ya-HuiThin solid films, 2013-10, Vol.545, p.476-479 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol–gel and thermally grown methodsDai, Chi-Jie ; Tsao, Hou-Yen ; Lin, Yow-Jon ; Liu, Day-ShanThin solid films, 2014-02, Vol.552, p.159-163 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatmentLin, Jian-Huang ; Zeng, Jian-Jhou ; Lin, Yow-JonThin solid films, 2014-01, Vol.550, p.582-586 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodesHe, Guan-Ru ; Lin, Yow-Jon ; Chang, Hsing-Cheng ; Chen, Ya-HuiThin solid films, 2012-12, Vol.525, p.154-157 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performanceWu, Chang-Lin ; Lin, Yow-JonIndian journal of physics, 2018-12, Vol.92 (12), p.1533-1539 [Periódico revisado por pares]New Delhi: Springer IndiaTexto completo disponível |
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8 |
Material Type: Artigo
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Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymerLin, Yow-Jon ; Jheng, Mei-Jyuan ; Zeng, Jian-JhouApplied surface science, 2010-05, Vol.256 (14), p.4493-4496 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Improved ohmic contacts on pentacene based on Au with ultraviolet irradiation treatmentLin, Yow-Jon ; Chu, Jian-An ; Su, Yu-Chao ; Lee, Ching-Ting ; Chang, Hsing-ChengThin solid films, 2010-03, Vol.518 (10), p.2707-2709 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester: Black phosphorus/p-type Si devicesLin, Yow-Jon ; Lin, Hong-Zhi ; Tang, Zhi-Hui ; Chang, Hsing-ChengMicroelectronic engineering, 2016-12, Vol.166, p.5-9 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |