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Refinado por: Base de dados/Biblioteca: Science Citation Index Expanded (Web of Science) remover Base de dados/Biblioteca: AIP - American Institute of Physics remover
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Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors
Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors
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Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors

Li, Hongfei ; Guo, Yuzheng ; Robertson, John ; Okuno, Y.

Journal of applied physics, 2016-02, Vol.119 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy
Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy
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Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy

Okuno, Y. ; Okuda, S. ; Akiyoshi, M. ; Oka, T. ; Harumoto, M. ; Omura, K. ; Kawakita, S. ; Imaizumi, M. ; Messenger, S. R. ; Lee, K. H. ; Yamaguchi, M.

Journal of applied physics, 2017-09, Vol.122 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Thermally stable high effective work function TaCN thin films for metal gate electrode applications
Thermally stable high effective work function TaCN thin films for metal gate electrode applications
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Thermally stable high effective work function TaCN thin films for metal gate electrode applications

Adelmann, C ; Meersschaut, J ; Ragnarsson, L.-Å ; Conard, T ; Franquet, A ; Sengoku, N ; Okuno, Y ; Favia, P ; Bender, H ; Zhao, C ; O'Sullivan, B J ; Rothschild, A ; Schram, T ; Kittl, J A ; Van Elshocht, S ; De Gendt, S ; Lehnen, P ; Boissière, O ; Lohe, C

Journal of applied physics, 2009-03, Vol.105 (5), p.053516-053516-8 [Periódico revisado por pares]

American Institute of Physics

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4
Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)
Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)
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Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)

Okuno, Y. ; Aoki, M. ; Tsuchiya, T. ; Uomi, K.

Applied physics letters, 1995-08, Vol.67 (6), p.810-812 [Periódico revisado por pares]

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5
Crystal growth and fabrication of a 1.3-μm-wavelength multiple-quantum-well laser on a (211)A InP substrate
Crystal growth and fabrication of a 1.3-μm-wavelength multiple-quantum-well laser on a (211)A InP substrate
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Crystal growth and fabrication of a 1.3-μm-wavelength multiple-quantum-well laser on a (211)A InP substrate

Okuno, Y. ; Tsuchiya, T. ; Okai, M.

Applied physics letters, 1997-10, Vol.71 (14), p.1918-1920 [Periódico revisado por pares]

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6
STRUCTURAL AND OPTOELECTRONIC PROPERTIES AND THEIR RELATIONSHIP WITH STRAIN RELAXATION IN HETEROEPITAXIAL INP LAYERS GROWN ON GAAS SUBSTRATES
STRUCTURAL AND OPTOELECTRONIC PROPERTIES AND THEIR RELATIONSHIP WITH STRAIN RELAXATION IN HETEROEPITAXIAL INP LAYERS GROWN ON GAAS SUBSTRATES
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STRUCTURAL AND OPTOELECTRONIC PROPERTIES AND THEIR RELATIONSHIP WITH STRAIN RELAXATION IN HETEROEPITAXIAL INP LAYERS GROWN ON GAAS SUBSTRATES

OLEGO, DJ ; OKUNO, Y ; KAWANO, T ; TAMURA, M

Journal of applied physics, 1992-05, Vol.71 (9), p.4492-4501 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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7
Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy
Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy
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Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxy

Itani, Y. ; Asahi, H. ; Kaneko, T. ; Okuno, Y. ; Gonda, S.

Journal of applied physics, 1993-02, Vol.73 (3), p.1161-1167 [Periódico revisado por pares]

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8
INFLUENCE OF HYDROGEN ON THE STEP FLOW GROWTH OF GAAS ON VICINAL SURFACES BY GAS-SOURCE MIGRATION ENHANCED EPITAXY
INFLUENCE OF HYDROGEN ON THE STEP FLOW GROWTH OF GAAS ON VICINAL SURFACES BY GAS-SOURCE MIGRATION ENHANCED EPITAXY
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INFLUENCE OF HYDROGEN ON THE STEP FLOW GROWTH OF GAAS ON VICINAL SURFACES BY GAS-SOURCE MIGRATION ENHANCED EPITAXY

ASAHI, H ; HISAKA, T ; KIM, SG ; KANEKO, T ; YU, SJ ; OKUNO, Y ; GONDA, S

Applied physics letters, 1992-08, Vol.61 (9), p.1054-1056 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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9
HETEROEPITAXIAL GAAS-LAYERS ON INP SUBSTRATES - RADIATIVE RECOMBINATIONS, STRAIN RELAXATION, STRUCTURAL-PROPERTIES, AND COMPARISON WITH INP LAYERS ON GAAS
HETEROEPITAXIAL GAAS-LAYERS ON INP SUBSTRATES - RADIATIVE RECOMBINATIONS, STRAIN RELAXATION, STRUCTURAL-PROPERTIES, AND COMPARISON WITH INP LAYERS ON GAAS
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HETEROEPITAXIAL GAAS-LAYERS ON INP SUBSTRATES - RADIATIVE RECOMBINATIONS, STRAIN RELAXATION, STRUCTURAL-PROPERTIES, AND COMPARISON WITH INP LAYERS ON GAAS

OLEGO, DJ ; OKUNO, Y ; KAWANO, T ; TAMURA, M

Journal of applied physics, 1992-05, Vol.71 (9), p.4502-4508 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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10
HETEROEPITAXIAL INP LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NOVEL GAAS ON SI BUFFERS OBTAINED BY MOLECULAR-BEAM EPITAXY
HETEROEPITAXIAL INP LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NOVEL GAAS ON SI BUFFERS OBTAINED BY MOLECULAR-BEAM EPITAXY
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HETEROEPITAXIAL INP LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NOVEL GAAS ON SI BUFFERS OBTAINED BY MOLECULAR-BEAM EPITAXY

OLEGO, DJ ; TAMURA, M ; OKUNO, Y ; KAWANO, T ; HASHIMOTO, A

Journal of applied physics, 1992-05, Vol.71 (9), p.4329-4332 [Periódico revisado por pares]

WOODBURY: Amer Inst Physics

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