Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Erratum: “Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering” [Appl. Phys. Lett. 111, 222106 (2017)]Liu, Kaikai ; Sun, Haiding ; AlQatari, Feras ; Guo, Wenzhe ; Liu, Xinwei ; Li, Jingtao ; Torres Castanedo, Carlos G ; Li, XiaohangApplied physics letters, 2018-12, Vol.113 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
2 |
Material Type: Artigo
|
Simultaneously realizing reversal of piezoelectric coefficient and enhancement of piezoresponse by chromium-doping in aluminum nitride filmsYuan, Langru ; Yu, Hongcai ; Xiong, Yaonan ; Li, Zhou ; Wang, Tingjun ; Shan, Dongliang ; Chen, Shulin ; Hong, Jiawang ; Liu, Yunya ; Yang, BinApplied physics letters, 2024-04, Vol.124 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
3 |
Material Type: Artigo
|
Valence and conduction band offsets of β-Ga2O3/AlN heterojunctionSun, Haiding ; Torres Castanedo, C. G. ; Liu, Kaikai ; Li, Kuang-Hui ; Guo, Wenzhe ; Lin, Ronghui ; Liu, Xinwei ; Li, Jingtao ; Li, XiaohangApplied physics letters, 2017-10, Vol.111 (16) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
4 |
Material Type: Artigo
|
Surface optical phonon-assisted exciton photoluminescence spectroscopy in Q1D AlN nanostructuresZhang, Li ; Liang, Z. W. ; Liu, Q. ; Yang, A. L. ; Shi, Jun-Jie ; Wang, QiApplied physics letters, 2023-09, Vol.123 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
5 |
Material Type: Artigo
|
Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al0.7Sc0.3NYazawa, Keisuke ; Drury, Daniel ; Zakutayev, Andriy ; Brennecka, Geoff L.Applied physics letters, 2021-04, Vol.118 (16) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
6 |
Material Type: Artigo
|
Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxyWang, Ding ; Wang, Ping ; Wang, Boyu ; Mi, ZetianApplied physics letters, 2021-09, Vol.119 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
7 |
Material Type: Artigo
|
Doping effects on the ferroelectric properties of wurtzite nitridesLiu, Zhijie ; Wang, Xinyu ; Ma, Xingyue ; Yang, Yurong ; Wu, DiApplied physics letters, 2023-03, Vol.122 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
8 |
Material Type: Artigo
|
Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomographySarker, Jith ; Tran, Tinh Binh ; AlQatari, Feras ; Liao, Che-Hao ; Li, Xiaohang ; Mazumder, BaishakhiApplied physics letters, 2020-12, Vol.117 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
9 |
Material Type: Artigo
|
On the exceptional temperature stability of ferroelectric Al1-xScxN thin filmsIslam, Md. Redwanul ; Wolff, Niklas ; Yassine, Mohamed ; Schönweger, Georg ; Christian, Björn ; Kohlstedt, Hermann ; Ambacher, Oliver ; Lofink, Fabian ; Kienle, Lorenz ; Fichtner, SimonApplied physics letters, 2021-06, Vol.118 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
10 |
Material Type: Artigo
|
N-polar ScAlN and HEMTs grown by molecular beam epitaxyWang, Ping ; Wang, Ding ; Wang, Boyu ; Mohanty, Subhajit ; Diez, Sandra ; Wu, Yuanpeng ; Sun, Yi ; Ahmadi, Elaheh ; Mi, ZetianApplied physics letters, 2021-08, Vol.119 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |