Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende HomojunctionTedeschi, Davide ; Fonseka, H. Aruni ; Blundo, Elena ; Granados del Águila, Andrés ; Guo, Yanan ; Tan, Hark H ; Christianen, Peter C. M ; Jagadish, Chennupati ; Polimeni, Antonio ; De Luca, MartaACS nano, 2020-09, Vol.14 (9), p.11613-11622 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
12 |
Material Type: Artigo
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Polarized Light Absorption in Wurtzite InP Nanowire EnsemblesDe Luca, Marta ; Zilli, Attilio ; Fonseka, H. Aruni ; Mokkapati, Sudha ; Miriametro, Antonio ; Tan, Hark Hoe ; Smith, Leigh Morris ; Jagadish, Chennupati ; Capizzi, Mario ; Polimeni, AntonioNano letters, 2015-02, Vol.15 (2), p.998-1005 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
13 |
Material Type: Artigo
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InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologyAmeruddin, Amira S ; Fonseka, H Aruni ; Caroff, Philippe ; Wong-Leung, Jennifer ; Op het Veld, Roy LM ; Boland, Jessica L ; Johnston, Michael B ; Tan, Hark Hoe ; Jagadish, ChennupatiNanotechnology, 2015-05, Vol.26 (20) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
14 |
Material Type: Artigo
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Tuning the crystal structure and optical properties of selective area grown InGaAs nanowiresAzimi, Zahra ; Gopakumar, Aswani ; Ameruddin, Amira S. ; Li, Li ; Truong, Thien ; Nguyen, Hieu T. ; Tan, Hark Hoe ; Jagadish, Chennupati ; Wong-Leung, JenniferNano research, 2022-04, Vol.15 (4), p.3695-3703 [Periódico revisado por pares]Beijing: Tsinghua University PressTexto completo disponível |
15 |
Material Type: Artigo
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Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength OptoelectronicsAzimi, Zahra ; Gopakumar, Aswani ; Li, Li ; Kremer, Felipe ; Lockrey, Mark ; Wibowo, Ary Anggara ; Nguyen, Hieu T. ; Tan, Hark Hoe ; Jagadish, Chennupati ; Wong‐Leung, JenniferAdvanced optical materials, 2022-09, Vol.10 (18), p.n/aWeinheim: Wiley Subscription Services, IncTexto completo disponível |
16 |
Material Type: Artigo
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n‐SnOx as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting DiodesGagrani, Nikita ; Vora, Kaushal ; Adhikari, Sonachand ; Jiang, Yuxin ; Jagadish, Chennupati ; Tan, Hark HoeAdvanced optical materials, 2022-06, Vol.10 (11), p.n/aWeinheim: Wiley Subscription Services, IncTexto completo disponível |
17 |
Material Type: Artigo
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Lasing from InP Nanowire Photonic Crystals on InP SubstrateTu, Chia‐Wei ; Fränzl, Martin ; Gao, Qian ; Tan, Hark‐Hoe ; Jagadish, Chennupati ; Schmitzer, Heidrun ; Wagner, Hans PeterAdvanced optical materials, 2021-02, Vol.9 (3), p.n/aWeinheim: Wiley Subscription Services, IncTexto completo disponível |
18 |
Material Type: Artigo
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Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical TestingChen, Bin ; Wang, Jun ; Gao, Qiang ; Chen, Yujie ; Liao, Xiaozhou ; Lu, Chunsheng ; Tan, Hark Hoe ; Mai, Yiu-Wing ; Zou, Jin ; Ringer, Simon P ; Gao, Huajian ; Jagadish, ChennupatiNano letters, 2013-09, Vol.13 (9), p.4369-4373 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
19 |
Material Type: Artigo
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Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arraysYuan, Xiaoming ; Wang, Naiyin ; Tian, Zhenzhen ; Zhang, Fanlu ; Li, Li ; Lockrey, Mark ; He, Jun ; Jagadish, Chennupati ; Tan, Hark HoeNanoscale horizons, 2020-11, Vol.5 (11), p.153-1537 [Periódico revisado por pares]Cambridge: Royal Society of ChemistryTexto completo disponível |
20 |
Material Type: Artigo
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Direct Observation of Charge-Carrier Heating at WZ–ZB InP Nanowire HeterojunctionsYong, Chaw Keong ; Wong-Leung, Jennifer ; Joyce, Hannah J ; Lloyd-Hughes, James ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Johnston, Michael B ; Herz, Laura MNano letters, 2013-09, Vol.13 (9), p.4280-4287 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |