Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Article
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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substratesBaidus, N. V. ; Aleshkin, V. Ya ; Dubinov, A. A. ; Kudryavtsev, K. E. ; Nekorkin, S. M. ; Novikov, A. V. ; Pavlov, D. A. ; Rykov, A. V. ; Sushkov, A. A. ; Shaleev, M. V. ; Yunin, P. A. ; Yurasov, D. V. ; Yablonskiy, A. N. ; Krasilnik, Z. F.Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530 [Peer Reviewed Journal]Moscow: Pleiades PublishingFull text available |
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2 |
Material Type: Article
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Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowiresMancini, L. ; Fontana, Y. ; Conesa-Boj, S. ; Blum, I. ; Vurpillot, F. ; Francaviglia, L. ; Russo-Averchi, E. ; Heiss, M. ; Arbiol, J. ; Morral, A. Fontcuberta i ; Rigutti, L.Applied physics letters, 2014-12, Vol.105 (24) [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
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3 |
Material Type: Article
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Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrateAleshkin, V. Ya ; Baidus, N. V. ; Dubinov, A. A. ; Fefelov, A. G. ; Krasilnik, Z. F. ; Kudryavtsev, K. E. ; Nekorkin, S. M. ; Novikov, A. V. ; Pavlov, D. A. ; Samartsev, I. V. ; Skorokhodov, E. V. ; Shaleev, M. V. ; Sushkov, A. A. ; Yablonskiy, A. N. ; Yunin, P. A. ; Yurasov, D. V.Applied physics letters, 2016-08, Vol.109 (6) [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
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4 |
Material Type: Article
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Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxyDiNezza, Michael J. ; Zhao, Xin-Hao ; Liu, Shi ; Kirk, Alexander P. ; Zhang, Yong-HangApplied physics letters, 2013-11, Vol.103 (19) [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
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5 |
Material Type: Article
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Exciton Recombination and Spin Dynamics in Indirect-Gap Quantum Wells and Quantum DotsShamirzaev, T. S.Physics of the solid state, 2018-08, Vol.60 (8), p.1554-1567 [Peer Reviewed Journal]Moscow: Pleiades PublishingFull text available |
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6 |
Material Type: Article
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Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar RadiationEmel’yanov, V. M. ; Kalyuzhnyy, N. A. ; Mintairov, S. A. ; Shvarts, M. Z.Technical physics letters, 2018-10, Vol.44 (10), p.877-880 [Peer Reviewed Journal]Moscow: Pleiades PublishingFull text available |
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7 |
Material Type: Article
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Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowiresLoitsch, Bernhard ; Jeon, Nari ; Döblinger, Markus ; Winnerl, Julia ; Parzinger, Eric ; Matich, Sonja ; Wurstbauer, Ursula ; Riedl, Hubert ; Abstreiter, Gerhard ; Finley, Jonathan J. ; Lauhon, Lincoln J. ; Koblmüller, GregorApplied physics letters, 2016-08, Vol.109 (9) [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
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8 |
Material Type: Article
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Electron spin relaxation time in (110) InGaAs/InAlAs quantum wellsYokota, Nobuhide ; Yasuda, Yusuke ; Ikeda, Kazuhiro ; Kawaguchi, HitoshiJournal of applied physics, 2014-07, Vol.116 (2) [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
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9 |
Material Type: Article
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Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasersNicolai, J. ; Gatel, Ch ; Warot-Fonrose, B. ; Teissier, R. ; Baranov, A. N. ; Magen, C. ; Ponchet, A.Applied physics letters, 2014-01, Vol.104 (3), p.31907 [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
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10 |
Material Type: Article
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Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage CurrentMaleev, N. A. ; Bobrov, M. A. ; Kuzmenkov, A. G. ; Vasil’ev, A. P. ; Kulagina, M. M. ; Maleev, S. N. ; Blokhin, S. A. ; Nevedomsky, V. N. ; Ustinov, V. M.Technical physics letters, 2018-10, Vol.44 (10), p.862-864 [Peer Reviewed Journal]Moscow: Pleiades PublishingFull text available |