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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
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Dynamic and structural stability of cubic vanadium nitrideMei, A. B. ; Hellman, O. ; Wireklint, N. ; Schlepütz, C. M. ; Sangiovanni, D. G. ; Alling, B. ; Rockett, A. ; Hultman, L. ; Petrov, I. ; Greene, J. E.Physical review. B, Condensed matter and materials physics, 2015-02, Vol.91 (5), p.054101, Article 054101 [Peer Reviewed Journal]United States: American Physical SocietyFull text available |
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Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputteringMei, A. B. ; Howe, B. M. ; Zhang, C. ; Sardela, M. ; Eckstein, J. N. ; Hultman, L. ; Rockett, A. ; Petrov, I. ; Greene, J. E.Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-11, Vol.31 (6), p.061516 [Peer Reviewed Journal]United StatesFull text available |
| 3 |
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Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlCFRODELIUS, J ; EKLUND, P ; BECKERS, M ; PERSSON, P. O. A ; HÖGBERG, H ; HULTMAN, LThin solid films, 2010, Vol.518 (6), p.1621-1626 [Peer Reviewed Journal]Amsterdam: ElsevierFull text available |
| 4 |
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Phase transformation in κ- and γ-Al2O3 coatings on cutting tool insertsTrinh, D.H. ; Back, K. ; Pozina, G. ; Blomqvist, H. ; Selinder, T. ; Collin, M. ; Reineck, I. ; Hultman, L. ; Högberg, H.Surface & coatings technology, 2009-03, Vol.203 (12), p.1682-1688 [Peer Reviewed Journal]Full text available |
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Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substratesEKLUND, P ; MURUGAIAH, A ; EMMERLICH, J ; CZIGANY, Zs ; FRODELIUS, J ; BARSOUM, M. W ; HÖGBERG, H ; HULTMAN, LJournal of crystal growth, 2007-06, Vol.304 (1), p.264-269 [Peer Reviewed Journal]Amsterdam: ElsevierFull text available |
| 6 |
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Nanoindentation studies of single-crystal (001)-, (011)-, and (111)-oriented TiN layers on MgOLjungcrantz, H. ; Odén, M. ; Hultman, L. ; Greene, J. E. ; Sundgren, J.-E.Journal of Applied Physics, 1996-12, Vol.80 (12), p.6725-6733 [Peer Reviewed Journal]United StatesFull text available |
| 7 |
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Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputteringValcheva, E ; Birch, J ; Persson, P O. Å ; Tungasmita, S ; Hultman, LJournal of applied physics, 2006-12, Vol.100 (12), p.123514-123514-6 [Peer Reviewed Journal]United States: American Institute of PhysicsFull text available |
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Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin filmsTrinh, D.H. ; Kubart, T. ; Nyberg, T. ; Ottosson, M. ; Hultman, L. ; Högberg, H.Thin solid films, 2008-10, Vol.516 (23), p.8352-8358 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
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The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin filmsBeckers, M ; Höglund, C ; Baehtz, C ; Martins, R M. S ; Persson, P O. Å ; Hultman, L ; Möller, WJournal of applied physics, 2009-09, Vol.106 (6), p.064915-064915-7 [Peer Reviewed Journal]United States: American Institute of PhysicsFull text available |
| 10 |
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Microstructure and electrical properties of Ti–Si–C–Ag nanocomposite thin filmsEklund, P. ; Joelsson, T. ; Ljungcrantz, H. ; Wilhelmsson, O. ; Czigány, Zs ; Högberg, H. ; Hultman, L.Surface & coatings technology, 2007, Vol.201 (14), p.6465-6469 [Peer Reviewed Journal]Lausanne: Elsevier B.VFull text available |
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