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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
Material Type: Article
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Modified three-stage model for forecasting the demand for energy resources at various hierarchy levels of the economyHorskyi, V V ; Maliarenko, O Ye ; Maistrenko, N Yu ; Teslenko, O I ; Kuts, H OIOP conference series. Earth and environmental science, 2022-06, Vol.1049 (1), p.12054 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 2 |
Material Type: Article
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IR study of exclusion-accumulation effects enhanced by the geometrical factorMalyutenko, V K ; Teslenko, G I ; Vainberg, V V ; Piotrowski, T ; Pultorak, JSemiconductor science and technology, 2000-11, Vol.15 (11), p.1054-1060 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 3 |
Material Type: Article
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Negative contrast IR emitting device based on the carrier contact exclusionMalyutenko, V K ; Vainberg, V V ; Teslenko, G I ; Malyutenko, O Yu ; Pultorak, JSemiconductor science and technology, 2003-07, Vol.18 (7), p.697-702 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 4 |
Material Type: Article
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The transient exclusion effect in intrinsic semiconductorsMalyutenko, V K ; Vainberg, V V ; Teslenko, G I ; Malyutenko, O Yu ; Pultorak, JSemiconductor science and technology, 2002-10, Vol.17 (10), p.1058-1063, Article 1058 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 5 |
Material Type: Article
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Cluster calculation of the boron centre in SiCPetrenko, T L ; Bugai, A A ; Baryakhtar, V G ; Teslenko, V V ; Khavryutchenko, V DSemiconductor science and technology, 1994-10, Vol.9 (10), p.1849-1852 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 6 |
Material Type: Article
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Cluster calculation of boron impurities in cubic SiC, substituting for Si and C sitesPetrenko, T L ; Teslenko, V V ; Bugai, A A ; Khavryutchenko, V D ; Klimov, A ASemiconductor science and technology, 1996-09, Vol.11 (9), p.1276-1284 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 7 |
Material Type: Article
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Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption BandPiotrowski, T ; Wegrzecki, M ; Czerwinski, A ; Teslenko, G I ; Malyutenko, O Y ; Malyutenko, V KJournal of physics. Conference series, 2014-01, Vol.494 (1), p.12012-5 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
| 8 |
Material Type: Article
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Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxidesProsandeyev, S A ; Teslenko, N M ; Fisenko, A VJournal of physics. Condensed matter, 1993-12, Vol.5 (50), p.9327-9344 [Peer Reviewed Journal]IOP PublishingFull text available |
| 9 |
Material Type: Article
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Breaking of symmetry of one-electron orbitals at oxygen vacancies in perovskite-type oxidesPROSANDEYEV, S. A ; TESLENKO, N. M ; FISENKO, A. VJournal of physics. Condensed matter, 1993, Vol.5 (50), p.9327-9344 [Peer Reviewed Journal]Bristol: Institute of PhysicsFull text available |
| 10 |
Material Type: Article
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Simulation of the process of interaction between the vehicle and snow in the environment of DEM and MBD-systemsTeslenko, D S ; Belyakov, V VIOP conference series. Materials Science and Engineering, 2021-03, Vol.1086 (1), p.12036 [Peer Reviewed Journal]Bristol: IOP PublishingFull text available |
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