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2D3D growth transition in metamorphic InAs/InGaAs quantum dots

Seravalli, Luca ; Trevisi, Giovanna ; Frigeri, Paola

CrystEngComm, 2012, Vol.14(3), pp.1155-1160 [Periódico revisado por pares]

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  • Título:
    2D3D growth transition in metamorphic InAs/InGaAs quantum dots
  • Autor: Seravalli, Luca ; Trevisi, Giovanna ; Frigeri, Paola
  • Assuntos: Indium Arsenides ; Indium Gallium Arsenides ; Mathematical Models ; Metamorphic ; Quantum Dots ; Segregations ; Three Dimensional ; Two Dimensional ; General (Wc) ; Atomic and Molecular Structure (So)
  • É parte de: CrystEngComm, 2012, Vol.14(3), pp.1155-1160
  • Descrição: We study the growth by Molecular Beam Epitaxy of InAs quantum dots (QDs) on InGaAs metamorphic buffers (MBs), allowing independent control of the mismatch f between QDs and MBs (7.2% > f > 4.5%) and the In content x of the surface underlying QDs (0 x 0.35), taking advantage of the dependence of MB strain relaxation on MB thickness. AFM characterization indicated an enlargement of QD diameters for x 0.35, while changing f had negligible effects. The two-dimensional (2D) to three-dimensional (3D) critical thickness c was measured by RHEED: for fixed x , c increases with reducing f due to the reduction of the elastic energy of the 2D InAs wetting layer (WL), in agreement with literature model predictions. For fixed f , c reduces with increasing x , an effect not reported so far that we discuss in terms of: (i) enhanced surface diffusion of In atoms on In-richer surfaces and (ii) In-richer WLs in the picture of 2D3D transition due to In segregation in WLs. These results indicate that metamorphic QDs provide interesting possibilities to control structure properties and can be a model system to investigate the physical mechanisms of the 2D3D transition.

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