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Charge transport mechanism in intercalated Cu x HfSe 2 compounds

Pleshchev, V. ; Baranov, N. ; Melnikova, N. ; Selezneva, N.

Physics of the Solid State, 2012, Vol.54(7), pp.1348-1352 [Periódico revisado por pares]

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  • Título:
    Charge transport mechanism in intercalated Cu x HfSe 2 compounds
  • Autor: Pleshchev, V. ; Baranov, N. ; Melnikova, N. ; Selezneva, N.
  • Assuntos: Heart Failure -- Electric Properties ; Crystal Structure -- Electric Properties ; Superconductors -- Electric Properties
  • É parte de: Physics of the Solid State, 2012, Vol.54(7), pp.1348-1352
  • Descrição: Alternating current resistivity measurements have been performed for the first time on intercalated Cu x HfSe 2 (0 ≤ x ≤ 0.18) samples using the impedance spectroscopy technique together with direct current measurements. The results obtained indicate the hopping mechanism of charge transport in Cu x HfSe 2 compounds. It has been found that an increase in the copper content in samples enhances relaxation processes. The ac conductivity exhibits frequency dispersion described by the universal dynamic response.
  • Idioma: Inglês

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