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Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons

Zhang, Huan ; Ding, Weiqiang ; He, Kai ; Li, Ming

Nanoscale Research Letters, 2010, Vol.5(8), pp.1264-1271 [Periódico revisado por pares]

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  • Título:
    Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons
  • Autor: Zhang, Huan ; Ding, Weiqiang ; He, Kai ; Li, Ming
  • Assuntos: Silicon carbide ; Nanomaterial synthesis ; Nanoribbon ; Nanobelt ; Hexagonal wurtzite
  • É parte de: Nanoscale Research Letters, 2010, Vol.5(8), pp.1264-1271
  • Descrição: In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon powder and carbon black powder placed in a horizontal tube furnace were exposed to temperatures ranging from 1,250 to 1,500°C for 5–12 h in an argon atmosphere at atmospheric pressure. The resulting SiC nanoribbons were tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. The nanoribbons were characterized with electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy, and were found to be hexagonal wurtzite–type SiC (2H-SiC) with a growth direction of [10\bar{1}0] . The influence of the synthesis conditions such as the reaction temperature, reaction duration and chamber pressure on the growth of the SiC nanomaterial was investigated. A vapor–solid reaction dominated nanoribbon growth mechanism was discussed.
  • Idioma: Inglês

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