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Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts

Krishnankutty, S. ; Kolbas, R. ; Khan, M. ; Kuznia, J. ; Hove, J. ; Olson, D.

Journal of Electronic Materials, 1992, Vol.21(6), pp.609-612 [Periódico revisado por pares]

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  • Título:
    Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts
  • Autor: Krishnankutty, S. ; Kolbas, R. ; Khan, M. ; Kuznia, J. ; Hove, J. ; Olson, D.
  • Assuntos: Photoluminescence ; pseudomorphic ; strain ; quantum confinement ; wurtzite crystal
  • É parte de: Journal of Electronic Materials, 1992, Vol.21(6), pp.609-612
  • Descrição: The low temperature (77 K) photoluminescence characteristics of Al x Ga 1- x N-GaN strained layer quantum wells with different x values grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The photoluminescence spectra were useful in analyzing both quantum confinement effects and strain induced energy shifts. The strain induced shifts were found to be a strong function of aluminum composition x . A model was developed to calculate the strain induced bandgap shifts at k = 0. The values predicted by this model which took into account the wurtzite crystal structure of the material system, were in good agreement with ( i.e. within 2 meV of) the experimentally measured shifts.
  • Idioma: Inglês

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