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Efficient Green Emission from Wurtzite Al InP Nanowires

Gagliano, L ; Kruijsse, M ; Schefold, J D D ; Belabbes, A ; Verheijen, M A ; Meuret, S ; Koelling, S ; Polman, A ; Bechstedt, F ; Haverkort, J E M ; Bakkers, E P A M

Nano letters, 13 June 2018, Vol.18(6), pp.3543-3549 [Periódico revisado por pares]

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  • Título:
    Efficient Green Emission from Wurtzite Al InP Nanowires
  • Autor: Gagliano, L ; Kruijsse, M ; Schefold, J D D ; Belabbes, A ; Verheijen, M A ; Meuret, S ; Koelling, S ; Polman, A ; Bechstedt, F ; Haverkort, J E M ; Bakkers, E P A M
  • Assuntos: Semiconductor Nanowire ; Aluminum Indium Phosphide ; Direct Band Gap ; Green ; Solid State Lighting ; Wurtzite
  • É parte de: Nano letters, 13 June 2018, Vol.18(6), pp.3543-3549
  • Descrição: Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al InP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al InP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement....
  • Idioma: Inglês

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