skip to main content

Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices

Wang, Fenglin ; Stepanov, Petr ; Gray, Mason ; Lau, Chun Ning ; Itkis, Mikhail E ; Haddon, Robert C

Nano letters, 12 August 2015, Vol.15(8), pp.5284-8 [Periódico revisado por pares]

Texto completo disponível

Ver todas as versões
Citações Citado por
  • Título:
    Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices
  • Autor: Wang, Fenglin ; Stepanov, Petr ; Gray, Mason ; Lau, Chun Ning ; Itkis, Mikhail E ; Haddon, Robert C
  • Assuntos: Ionic Liquid Gating ; Metal−Insulator Transition ; Molybdenum Disulfide ; Suspended Structure
  • É parte de: Nano letters, 12 August 2015, Vol.15(8), pp.5284-8
  • Descrição: We demonstrate ionic liquid (IL) gating of suspended few-layer MoS2 transistors, where ions can accumulate on both exposed surfaces. Upon application of IL, all free-standing samples consistently display more significant improvement in conductance than substrate-supported devices. The measured IL gate coupling efficiency is up to 4.6 × 10(13) cm(-2) V(-1). Electrical transport data reveal contact-dominated electrical transport properties and the Schottky emission as the underlying mechanism. By modulating IL gate voltage, the suspended MoS2 devices display metal-insulator transition. Our results demonstrate that more efficient charge induction can be achieved in suspended two-dimensional (2D) materials, which with further optimization, may enable extremely high charge density and novel phase transition.
  • Idioma: Inglês

Buscando em bases de dados remotas. Favor aguardar.