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Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

Wei, Wei ; Qin, Zhixin ; Fan, Shunfei ; Li, Zhiwei ; Shi, Kai ; Zhu, Qinsheng ; Zhang, Guoyi

Nanoscale research letters, 10 October 2012, Vol.7(1), pp.562 [Periódico revisado por pares]

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  • Título:
    Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
  • Autor: Wei, Wei ; Qin, Zhixin ; Fan, Shunfei ; Li, Zhiwei ; Shi, Kai ; Zhu, Qinsheng ; Zhang, Guoyi
  • É parte de: Nanoscale research letters, 10 October 2012, Vol.7(1), pp.562
  • Descrição: A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.
  • Idioma: Inglês

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