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Evidence for a spontaneous gapped state in ultraclean bilayer graphene

Bao, Wenzhong ; Velasco, Jairo ; Zhang, Fan ; Jing, Lei ; Standley, Brian ; Smirnov, Dmitry ; Bockrath, Marc ; Macdonald, Allan H ; Lau, Chun Ning

Proceedings of the National Academy of Sciences of the United States of America, 03 July 2012, Vol.109(27), pp.10802-5 [Periódico revisado por pares]

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  • Título:
    Evidence for a spontaneous gapped state in ultraclean bilayer graphene
  • Autor: Bao, Wenzhong ; Velasco, Jairo ; Zhang, Fan ; Jing, Lei ; Standley, Brian ; Smirnov, Dmitry ; Bockrath, Marc ; Macdonald, Allan H ; Lau, Chun Ning
  • Assuntos: Quantum Theory ; Electronics -- Methods ; Graphite -- Chemistry ; Magnetics -- Methods
  • É parte de: Proceedings of the National Academy of Sciences of the United States of America, 03 July 2012, Vol.109(27), pp.10802-5
  • Descrição: At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single-and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although σ(min) is often approximately 2-3 e(2)/h (where e is the electron charge and h is Planck's constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T(c) of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.
  • Idioma: Inglês

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