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Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition.(Report)

Tatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.

Journal of Crystal Growth, May 1, 2013, Vol.370, p.299(4) [Periódico revisado por pares]

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  • Título:
    Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition.(Report)
  • Autor: Tatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.
  • Assuntos: Chemical Vapor Deposition -- Analysis ; Chemical Vapor Deposition -- Optical Properties ; Epitaxy -- Optical Properties ; Epitaxy -- Analysis ; Gallium Arsenide -- Optical Properties ; Gallium Arsenide -- Analysis
  • É parte de: Journal of Crystal Growth, May 1, 2013, Vol.370, p.299(4)
  • Descrição: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jcrysgro.2012.11.063 Byline: J. Tatebayashi (a), Y. Ota (a), S. Ishida (a)(b), M. Nishioka (a)(b), S. Iwamoto (a)(b), Y. Arakawa (a)(b) Keywords: A2. Metalorganic vapor phase epitaxy; B2. Semiconductor III-V materials Abstract: We report formation and optical properties of site-controlled, multi-stack InGaAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InGaAs/GaAs QDs are realized in GaAs NWs grown on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures and identified by structural analyses and photoluminescence characterization. Optical characterization at 10K corroborates formation of high-quality, multi-stack InGaAs/GaAs QD-in-NWs up to 50-stack without degradation of PL intensities. In addition, light emission at room temperature from multi-stack InGaAs/GaAs QDs embedded in GaAs NWs is realized. These results would enable the realization of high-performance IBSCs based on site-controlled QD-in-NWs utilizing existing, well-established NW growth technologies on a GaAs platform. Author Affiliation: (a) NanoQUINE, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan (b) Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
  • Idioma: English

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