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Valence band offset of [beta][-Ga.sub.2]O.sub.3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.(Report)

Wei, Wei ; Qin, Zhixin ; Fan, Shunfei ; Li, Zhiwei ; Shi, Kai ; Zhu, Qinsheng ; Zhang, Guoyi

Nanoscale Research Letters, 2012, Vol.7(1), p.1(5) [Periódico revisado por pares]

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  • Título:
    Valence band offset of [beta][-Ga.sub.2]O.sub.3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.(Report)
  • Autor: Wei, Wei ; Qin, Zhixin ; Fan, Shunfei ; Li, Zhiwei ; Shi, Kai ; Zhu, Qinsheng ; Zhang, Guoyi
  • Assuntos: Epitaxy ; X-Ray Spectroscopy ; Liquor
  • É parte de: Nanoscale Research Letters, 2012, Vol.7(1), p.1(5)
  • Descrição: Byline: Wei Wei (1,1158), Zhixin Qin (1,1158), Shunfei Fan (1,1158), Zhiwei Li (2,1158), Kai Shi (2,1158), Qinsheng Zhu (2,1158), Guoyi Zhang (1,1158) Keywords: [beta][-Ga.sub.2]O.sub.3/wurtzite GaN heterostructure; Band offset; X-ray photoelectron spectroscopy Abstract: A sample of the [beta][-Ga.sub.2]O.sub.3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the [beta][-Ga.sub.2]O.sub.3 layer was formed epitaxially on GaN. The valence band offset of the [beta][-Ga.sub.2]O.sub.3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the [beta][-Ga.sub.2]O.sub.3/GaN structure is 1.40+-0.08 eV. Author Affiliation: (11158) State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing, 100871, People's Republic of China (21158) Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China Article History: Registration Date: 28/08/2012 Received Date: 28/08/2012 Accepted Date: 24/09/2012 Online Date: 10/10/2012
  • Idioma: Inglês

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