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Joining of SiC with Si infiltrated tape-cast TiB.sub.2-C interlayer: Effect of interlayer composition and thickness on the microstructure and mechanical properties

Tian, Wu - Bian ; Kita, Hideki ; Hyuga, Hideki ; Kondo, Naoki

Materials Science & Engineering A, Dec 15, 2011, Vol.530, p.580(5) [Periódico revisado por pares]

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  • Título:
    Joining of SiC with Si infiltrated tape-cast TiB.sub.2-C interlayer: Effect of interlayer composition and thickness on the microstructure and mechanical properties
  • Autor: Tian, Wu - Bian ; Kita, Hideki ; Hyuga, Hideki ; Kondo, Naoki
  • Assuntos: Silicon Carbides -- Mechanical Properties
  • É parte de: Materials Science & Engineering A, Dec 15, 2011, Vol.530, p.580(5)
  • Descrição: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.msea.2011.10.026 Byline: Wu-Bian Tian, Hideki Kita, Hideki Hyuga, Naoki Kondo Keywords: Joining; Silicon carbide; Reactive infiltration; Microstructure; Mechanical properties Abstract: a* Si infiltrated TiB.sub.2-C tapes result in the strong bonding of SiC bodies by forming a dense TiB.sub.2-SiC-Si composite interlayer. a* Grain growth behavior of TiB.sub.2 and reaction-formed SiC within interlayer is affected by tape composition and infiltration process. a* Bending strengths of SiC joints higher than 360MPa can be achieved using the pressureless infiltration technique. Author Affiliation: National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan Article History: Received 1 April 2011; Revised 19 August 2011; Accepted 5 October 2011
  • Idioma: English

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