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Ultrafast turn-off of high currents by field-controlled integrated thyristor.(Report)

Grekhov, I. V. ; Kostina, L. S. ; Rozhkov, A. V.

Technical Physics Letters, Oct, 2010, Vol.36(10), p.926(3) [Periódico revisado por pares]

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  • Título:
    Ultrafast turn-off of high currents by field-controlled integrated thyristor.(Report)
  • Autor: Grekhov, I. V. ; Kostina, L. S. ; Rozhkov, A. V.
  • Assuntos: Transistors
  • É parte de: Technical Physics Letters, Oct, 2010, Vol.36(10), p.926(3)
  • Descrição: Byline: I. V. Grekhov (1), L. S. Kostina (1), A. V. Rozhkov (1) Abstract: The turn-off process in a powerful high-voltage switch of the new type, integrated thyristor controlled by an external MOSFET, has been studied. Dynamic characteristics were measured in high current turn-off regimes, in which plasma is removed by the full device current. The limiting density of switched current amounted to 600 A/cm.sup.2. The regime with short circuit of several dozen thousand parallel operating microthyristor cells is quite effective, ensuring a current decay time of about 40 ns, which is several times as small as that in all other types of high-voltage switches for working voltages above 1.5 kV. Author Affiliation: (1) Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia Article History: Registration Date: 30/10/2010 Received Date: 03/06/2010 Online Date: 05/11/2010 Article note: Original Russian Text (c) I.V. Grekhov, L.S. Kostina, A.V. Rozhkov, 2010, published in Pis'ma v Zhurnal TekhnicheskoE Fiziki, 2010, Vol. 36, No. 19, pp. 107--111.
  • Idioma: English

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