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Dependence on Al concentration of the optical phonons of Al xGa 1− xN films

Liu, Ming S ; Tong, Y.Z ; Bursill, Les A ; Prawer, S ; Nugent, K.W ; Zhang, G.Y

Solid State Communications, 1998, Vol.108(10), pp.765-768 [Periódico revisado por pares]

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  • Título:
    Dependence on Al concentration of the optical phonons of Al xGa 1− xN films
  • Autor: Liu, Ming S ; Tong, Y.Z ; Bursill, Les A ; Prawer, S ; Nugent, K.W ; Zhang, G.Y
  • Assuntos: Chemistry ; Physics
  • É parte de: Solid State Communications, 1998, Vol.108(10), pp.765-768
  • Descrição: The MicroRaman scattering properties of Al x Ga 1− x N ( x=0, 0.07, 0.15) are presented. The observed modes followed the wurtzite GaN and AlN selection rules. For increasing x, the optical phonon frequencies shift linearly towards higher frequencies and broaden. The x-dependence of these modes corresponds to one-mode behavior of ternary alloys. The mechanism of Al concentration effect on the optical phonons in Al x Ga 1− x N films is discussed in the virtual crystal approximation.
  • Idioma: Inglês

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