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Multiphonon Raman scattering in semiconductor nanocrystals: Importance of nonadiabatic transitions

Pokatilov, E. P. ; Klimin, S. N. ; Fomin, V. M. ; Devreese, J. T. ; Wise, F. W.

Physical Review B, 2/2002, Vol.65(7) [Periódico revisado por pares]

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  • Título:
    Multiphonon Raman scattering in semiconductor nanocrystals: Importance of nonadiabatic transitions
  • Autor: Pokatilov, E. P. ; Klimin, S. N. ; Fomin, V. M. ; Devreese, J. T. ; Wise, F. W.
  • Assuntos: Condensed Matter - Mesoscale And Nanoscale Physics
  • É parte de: Physical Review B, 2/2002, Vol.65(7)
  • Descrição: Multi-phonon Raman scattering in semiconductor nanocrystals is treated taking into account both adiabatic and non-adiabatic phonon-assisted optical transitions. Because phonons of various symmetries are involved in scattering processes, there is a considerable enhancement of intensities of multi-phonon peaks in nanocrystal Raman spectra. Cases of strong and weak band mixing are considered in detail. In the first case, fundamental scattering takes place via internal electron-hole states and is participated by s- and d-phonons, while in the second case, when the intensity of the one-phonon Raman peak is strongly influenced by the interaction of an electron and of a hole with interface imperfections (e. g., with trapped charge), p-phonons are most active. Calculations of Raman scattering spectra for CdSe and PbS nanocrystals give a good quantitative agreement with recent experimental results. Comment: 16 pages, 2 figures, E-mail addresses: devreese@uia.ua.ac.be, fomin@uia.ua.ac.be, fwise@ccmr.cornell.edu, accepted for publication in Physical Review B
  • Idioma: Inglês

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