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Microanalysis of wurtzite-GaN single crystals prepared by d.c. arc discharge

Yu, San ; Li, Hongdong ; Yang, Haibin ; Li, Dongmei ; Sun, Haiping ; Zou, Guangtian

Materials Letters, 1/1996, Vol.26(1-2), pp.77-80 [Periódico revisado por pares]

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  • Título:
    Microanalysis of wurtzite-GaN single crystals prepared by d.c. arc discharge
  • Autor: Yu, San ; Li, Hongdong ; Yang, Haibin ; Li, Dongmei ; Sun, Haiping ; Zou, Guangtian
  • Assuntos: Gallium Nitride ; Gan ; Synthesis ; Arc Discharge ; Single Crystals ; Wurtzite
  • É parte de: Materials Letters, 1/1996, Vol.26(1-2), pp.77-80
  • Descrição: Gallium nitride crystals with definite faces have been fabricated by d.c. arc discharge using gallium and H 2 + NH 3 as starting materials. Transmission electron microscope, selected area diffraction and X-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN having a wurtzite structure with lattice constants a 0 = 3.18 A ̊ and c 0 = 5.18 A ̊ . Both X-ray microanalysis and nano-probe diffraction techniques have been used to determine the composition and microstructure of the samples.
  • Idioma: Inglês

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