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Measurement of phosphorus segregation in silicon at the atomic-scale using STM

Oberbeck, Lars ; Curson, Neil J. ; Hallam, Toby ; Simmons, Michelle Y. ; Clark, Robert G. ; Bilger, Gerhard

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  • Título:
    Measurement of phosphorus segregation in silicon at the atomic-scale using STM
  • Autor: Oberbeck, Lars ; Curson, Neil J. ; Hallam, Toby ; Simmons, Michelle Y. ; Clark, Robert G. ; Bilger, Gerhard
  • Assuntos: Condensed Matter
  • Descrição: In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a $\delta$-doped layer in silicon after encapsulation at 250$^{\circ}$C and room temperature using secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), and STM. We show that the surface phosphorus density can be reduced to a few percent of the initial $\delta$-doped density if the phosphorus atoms are encapsulated with 5 or 10 monolayers of epitaxial silicon at room temperature. We highlight the limitations of SIMS and AES to determine phosphorus segregation at the atomic-scale and the advantage of using STM directly.

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