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High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

Takahashi, S. ; Tajiri, T. ; Watanabe, K. ; Ota, Y. ; Iwamoto, S. ; Arakawa, Y.

Electronics Letters 54, 305 (2018) [Periódico revisado por pares]

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  • Título:
    High-Q nanocavities in semiconductor-based three-dimensional photonic crystals
  • Autor: Takahashi, S. ; Tajiri, T. ; Watanabe, K. ; Ota, Y. ; Iwamoto, S. ; Arakawa, Y.
  • Assuntos: Physics - Optics
  • É parte de: Electronics Letters 54, 305 (2018)
  • Descrição: We experimentally demonstrated high quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4-times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, we successfully observed a lasing oscillation from this cavity mode. Comment: 2 pages, 3 figures

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